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公开(公告)号：EP1091617A3
公开(公告)日：2004-10-20
申请号：EP00308744.2
申请日：2000-10-04
发明人： Okawa, Shigeaki , Ohkoda, Toshiyuki , Ohbayashi, Yoshiaki , Yasuda, Mamoru , Saeki, Shinichi , Osawa, Shuji
IPC分类号： H04R19/00
CPC分类号： H04R19/005 , H04R19/04
摘要： A fixed electrode layer 12 is formed on a semiconductor substrate 11. A vibrating film is formed on the fixed electrode layer through a spacer 14. Since the vibrating film is a light-permeable film, in order to prevent the malfunction of an electronic circuit formed in the semiconductor substrate by incident light, the region where the electronic circuit is to be formed is covered with a shield metal 33.
摘要翻译： 固定电极层12形成在半导体基板11上。振动膜通过隔板14形成在固定电极层上。由于振动膜是透光膜，为了防止形成的电子电路的故障 在入射光的半导体基板中，形成电子电路的区域被屏蔽金属33覆盖。
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2.发明公开Semiconductor device, semiconductor electret condenser microphone, and method of producing semiconductor electret condenser microphone 审中-公开一种半导体器件，Halbleiterelektret电容话筒及其制造Halbleiterelektret电容传声器的方法
公开(公告)号：EP1085784A3
公开(公告)日：2003-04-23
申请号：EP00308009.0
申请日：2000-09-14
发明人： Okawa, Shigeaki , Ohkoda, Toshiyuki , Ohbayashi, Yoshiaki , Yasuda, Mamoru , Saeki, Shinichi , Osawa, Shuji
IPC分类号： H04R19/00
CPC分类号： H04R7/16 , H04R19/005 , H04R19/04
摘要： A stationary electrode layer 12 is formed on a semiconductor substrate 11, and a vibrating diaphragm 16 is disposed on spacers 14. The vibrating diaphragm 16 is placed so as to protrude from an end of the semiconductor substrate 11, and terminal pads 20 to 23 are placed with being exposed from the vibrating diaphragm 16.
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公开(公告)号：EP1035575A2
公开(公告)日：2000-09-13
申请号：EP00200833.2
申请日：2000-03-08
发明人： Okawa, Shigeaki , Ohkoda, Toshiyuki
IPC分类号： H01L21/762 , H01L23/522 , H01L21/8249 , H01L27/06 , H01L29/808
CPC分类号： H01L21/761 , H01L27/0635 , H01L2924/0002 , H01L2924/00
摘要： The object of the present invention is to provide a semiconductor device, which is suitable for use to connect electric condenser microphones.
A semiconductor device, comprises: a conductivity-type substrate; an epitaxial layer formed on top of the substrate; island regions separating the epitaxial layer; an input transistor formed on one of the island regions; an insulation layer covering the surface of the input transistor layer; an expansion electrode formed above the insulation layer so as to provide an electrical connection to an input terminal of the input transistor; and resistivity of the epitaxial layer formed below the expansion electrode being in a range of 100∼5,000 Ω·cm.摘要翻译： 本发明的目的是提供一种适用于连接电容式麦克风的半导体器件。 一种半导体器件，包括：导电型衬底; 形成在基板顶部的外延层; 分离外延层的岛区; 形成在所述岛区域之一上的输入晶体管; 覆盖输入晶体管层的表面的绝缘层; 扩展电极，形成在所述绝缘层之上，以便提供与所述输入晶体管的输入端的电连接; 并且在膨胀电极下形成的外延层的电阻率在100-3000欧姆·厘米的范围内。
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公开(公告)号：EP1906454A3
公开(公告)日：2008-11-19
申请号：EP07019157.2
申请日：2007-09-28
IPC分类号： H01L29/866 , H01L29/872 , H01L29/47 , H01L29/40 , H01L27/07 , H01L29/06
CPC分类号： H01L27/0788 , H01L27/0255 , H01L29/0615 , H01L29/0692 , H01L29/402 , H01L29/47 , H01L29/866 , H01L29/872
摘要： There is a problem that a reverse off-leak current becomes too large in a Schottky barrier diode. A semiconductor device of the present invention includes P-type first and second anode diffusion layers 5, 6 formed in an N-type epitaxial layer 3, N-type cathode diffusion layers 4 formed in the epitaxial layer 3, a P-type third anode diffusion layer 7, 8 formed in the epitaxial layer 3 so as to surround the first and second anode diffusion layers 5, 6 and to extend toward the cathode diffusion layers 4, and a Schottky barrier metal layer 14 formed on the first and second anode diffusion layers 5, 6.
摘要翻译： 在肖特基势垒二极管中存在反向漏电流过大的问题。 本发明的半导体器件包括在N型外延层3中形成的P型第一和第二阳极扩散层5,6，在外延层3中形成的N型阴极扩散层4，P型第三阳极 形成在外延层3中以围绕第一和第二阳极扩散层5,6并且朝向阴极扩散层4延伸的扩散层7,8，以及形成在第一和第二阳极扩散区上的肖特基势垒金属层14 层5,6。
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公开(公告)号：EP1187194A3
公开(公告)日：2004-11-10
申请号：EP01307575.9
申请日：2001-09-06
IPC分类号： H01L21/8228 , H01L21/86 , H01L21/762
CPC分类号： H01L21/76297 , H01L21/76264 , H01L21/8228 , H01L21/84 , H01L27/1203
摘要： A buried layer of a collector region and a buried layer of a collector taking-out region are formed at the same time at each epitaxial layer when the collector region and the collector taking-out region of the semiconductor integrated circuit device according to the invention. Each buried layer is diffused to connect, and etched in V-groove. By that, the collector region and collector taking-out region made thick in film are formed at the same time so as to realize the semiconductor integrated circuit device of high withstanding voltage.
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公开(公告)号：EP1035575A3
公开(公告)日：2001-10-17
申请号：EP00200833.2
申请日：2000-03-08
发明人： Okawa, Shigeaki , Ohkoda, Toshiyuki
IPC分类号： H01L21/762 , H01L23/522 , H01L21/8249 , H01L27/06 , H01L29/808 , H01L23/485 , H01L21/761
CPC分类号： H01L21/761 , H01L27/0635 , H01L2924/0002 , H01L2924/00
摘要： The object of the present invention is to provide a semiconductor device, which is suitable for use to connect electric condenser microphones. A semiconductor device, comprises: a conductivity-type substrate; an epitaxial layer formed on top of the substrate; island regions separating the epitaxial layer; an input transistor formed on one of the island regions; an insulation layer covering the surface of the input transistor layer; an expansion electrode formed above the insulation layer so as to provide an electrical connection to an input terminal of the input transistor; and resistivity of the epitaxial layer formed below the expansion electrode being in a range of 100∼5,000 Ω·cm.
摘要翻译： 本发明的目的是提供一种适用于连接电容式麦克风的半导体装置。 一种半导体器件，包括：导电型衬底; 在衬底的顶部上形成的外延层; 分离外延层的岛区; 输入晶体管，形成在岛区之一上; 覆盖输入晶体管层的表面的绝缘层; 形成在所述绝缘层上方的扩展电极，以提供到所述输入晶体管的输入端子的电连接; 形成在扩展电极下方的外延层的电阻率在100〜5000Ω·cm的范围内。
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公开(公告)号：EP1187194B1
公开(公告)日：2007-03-07
申请号：EP01307575.9
申请日：2001-09-06
IPC分类号： H01L21/8228 , H01L21/86 , H01L21/762
CPC分类号： H01L21/76297 , H01L21/76264 , H01L21/8228 , H01L21/84 , H01L27/1203
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公开(公告)号：EP1091618A3
公开(公告)日：2004-10-20
申请号：EP00308761.6
申请日：2000-10-04
发明人： Okawa, Shigeaki , Ohkoda, Toshiyuki , Ohbayashi, Yoshiaki , Yasuda, Mamoru , Saeki, Shinichi , Osawa, Shuji
IPC分类号： H04R23/00
CPC分类号： H04R19/005 , H04R19/04
摘要： First, a stationary electrode layer is formed over a semiconductor substrate and an integrated network is composed in a circuit element area around the stationary electrode layer by electrode wiring forming each circuit element. A spacer is arranged on a passivation film in plural places. A dummy island is formed in an area between the circuit element area and the stationary electrode layer area. Supply potential Vcc is applied to the dummy island and ground potential GND is applied to a P + -type separated area.
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公开(公告)号：EP1091617A2
公开(公告)日：2001-04-11
申请号：EP00308744.2
申请日：2000-10-04
发明人： Okawa, Shigeaki , Ohkoda, Toshiyuki , Ohbayashi, Yoshiaki , Yasuda, Mamoru , Saeki, Shinichi , Osawa, Shuji
IPC分类号： H04R19/00
CPC分类号： H04R19/005 , H04R19/04
摘要： A fixed electrode layer 12 is formed on a semiconductor substrate 11. A vibrating film is formed on the fixed electrode layer through a spacer 14. Since the vibrating film is a light-permeable film, in order to prevent the malfunction of an electronic circuit formed in the semiconductor substrate by incident light, the region where the electronic circuit is to be formed is covered with a shield metal 33.
摘要翻译： 固定电极层12形成在半导体基板11上。通过间隔件14在固定电极层上形成振动膜。由于振动膜是透光膜，为了防止形成电子电路的故障 在入射光的半导体衬底中，要形成电子电路的区域被屏蔽金属33覆盖
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公开(公告)号：EP1763083B1
公开(公告)日：2010-02-03
申请号：EP06019023.8
申请日：2006-09-12
CPC分类号： H01L29/0696 , H01L29/0619 , H01L29/0878 , H01L29/1095 , H01L29/402 , H01L29/42368 , H01L29/4933 , H01L29/7816
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