发明授权
- 专利标题： A TRANSISTOR OF SIC
- 专利标题（中）： SIC晶体管
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申请号： EP99906628.5申请日： 1999-02-02
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公开(公告)号： EP1051755B1公开(公告)日： 2009-12-09
- 发明人: BAKOWSKI, Mietek , GUSTAFSSON, Ulf
- 申请人： CREE, INC.
- 申请人地址： 4600 Silicon Drive Durham, NC 27703 US
- 专利权人： CREE, INC.
- 当前专利权人： CREE, INC.
- 当前专利权人地址： 4600 Silicon Drive Durham, NC 27703 US
- 代理机构： Olsson, Jan
- 优先权： SE9800286 19980202
- 国际公布： WO1999039389 19990805
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/24
摘要：
A transistor of SiC for high voltage and high switching frequency applications is a MISFET or an IGBT. This transistor comprises a plurality of laterally spaced active regions. The center to center distance of two adjacent active regions defines a lateral width of a cell of the transistor. The relation of the lateral width of an accumulation region defined as the region in the drift layer connecting to a gate-insulating layer in each individual cell and the lateral cell width is selected so as to keep the power losses in the transistor as a consequence of switching below a determined proportion to the power losses relating to conduction of the transistor for a predetermined switching frequency and on-state voltage for which the transistor is designed.
公开/授权文献
- EP1051755A2 A TRANSISTOR OF SIC 公开/授权日：2000-11-15
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