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    A FIELD EFFECT TRANSISTOR OF SiC AND A METHOD FOR PRODUCTION THEREOF
    1.
    发明授权
    A FIELD EFFECT TRANSISTOR OF SiC AND A METHOD FOR PRODUCTION THEREOF 失效
    一种场效应晶体管OFF SIC及其制造方法

    公开(公告)号：EP0890183B1

    公开(公告)日：2005-08-31

    申请号：EP97915796.3

    申请日：1997-03-18

    申请人： CREE, INC.

    发明人： HARRIS, Christopher ,  BAKOWSKI, Mietek ,  GUSTAFSSON, Ulf

    IPC分类号： H01L21/00

    CPC分类号： H01L29/7802 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/66068

    摘要： A transistor of SiC comprises superimposed a drain (13), a highly doped substrate layer (1), a low doped n-type drift layer (2), a p-type base layer being divided into a first lower highly doped base sub-layer (3) and an upper low doped second base sub-layer (4) on top thereof, a highly doped n-type source region layer (6) and a source (11). It also has an insulating layer (8) with a gate electrode (9) thereon arranged on top of the base layer and extending laterally from the source region layer to a n-type layer (7) connected to the drift layer.

    A TRANSISTOR OF SIC
    2.
    发明授权
    A TRANSISTOR OF SIC 有权
    SIC晶体管

    公开(公告)号：EP1051755B1

    公开(公告)日：2009-12-09

    申请号：EP99906628.5

    申请日：1999-02-02

    申请人： CREE, INC.

    发明人： BAKOWSKI, Mietek ,  GUSTAFSSON, Ulf

    IPC分类号： H01L29/78 ,  H01L29/24

    CPC分类号： H01L29/7802 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/7397

    摘要： A transistor of SiC for high voltage and high switching frequency applications is a MISFET or an IGBT. This transistor comprises a plurality of laterally spaced active regions. The center to center distance of two adjacent active regions defines a lateral width of a cell of the transistor. The relation of the lateral width of an accumulation region defined as the region in the drift layer connecting to a gate-insulating layer in each individual cell and the lateral cell width is selected so as to keep the power losses in the transistor as a consequence of switching below a determined proportion to the power losses relating to conduction of the transistor for a predetermined switching frequency and on-state voltage for which the transistor is designed.

    JUNCTION TERMINATION FOR SiC SCHOTTKY DIODE
    8.
    发明授权
    JUNCTION TERMINATION FOR SiC SCHOTTKY DIODE 失效
    过渡账户SiC肖特基

    公开(公告)号：EP0965146B1

    公开(公告)日：2008-05-21

    申请号：EP98901638.1

    申请日：1998-01-21

    申请人： CREE, INC.

    发明人： BAKOWSKI, Mietek ,  GUSTAFSSON, Ulf ,  HARRIS, Christopher, I.

    IPC分类号： H01L29/872 ,  H01L29/06 ,  H01L29/24 ,  H01L21/329

    CPC分类号： H01L29/0615 ,  H01L29/0657 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/872

    摘要： A semiconductor diode structure with a Schottky junction, where a metal contact (2) and a silicon carbide semiconducting layer (1) of a first conducting type form said junction and where the edge of the junction exhibits a junction termination divided into a transition belt (TB) having gradually increasing total charge or effective sheet charge density closest to the metal contact and a Junction Termination Extension (JTE) outside the transition belt, said JTE having a charge profile with a stepwise or uniformly decreasing total charge or effective sheet charge density from an initial value to a zero or almost zero total charge at the outermost edge of the termination following a radial direction from the center part of the JTE towards the outermost edge of the termination. The purpose of the transition belt is to reduce the electric field concentration at the edge of the metal contact of the Schottky diode, while the purpose of the junction termination extension is to control the electric field at the periphery of the diode.