发明公开
EP1058274A1 Composition for film formation and material for insulating film formation
有权
Beschichtungszusammensetzungfürdie Filmherstellung und Materialfürisolierenden Schichten
- 专利标题： Composition for film formation and material for insulating film formation
- 专利标题（中）： Beschichtungszusammensetzungfürdie Filmherstellung und Materialfürisolierenden Schichten
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申请号： EP00111678.9申请日： 2000-05-31
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公开(公告)号： EP1058274A1公开(公告)日： 2000-12-06
- 发明人: Nishikawa, Michinori , Yamada, Kinji , Kakuta, Mayumi , Inoue, Yasutake , Ebisawa, Masahiko , Hakamatsuka, Satoko , Tamaki, Kentarou
- 申请人： JSR Corporation
- 申请人地址： 11-24, Tsukiji 2-chome, Chuo-ku Tokyo JP
- 专利权人： JSR Corporation
- 当前专利权人： JSR Corporation
- 当前专利权人地址： 11-24, Tsukiji 2-chome, Chuo-ku Tokyo JP
- 代理机构： Leson, Thomas Johannes Alois, Dipl.-Ing.
- 优先权： JP15867499 19990604; JP35286299 19991213
- 主分类号： H01B3/46
- IPC分类号： H01B3/46 ; H01L21/312
摘要：
A composition for film formation which is useful as an interlayer insulating film material in the production of semiconductor devices and the like, and gives a coating film having excellent uniformity, low dielectric constant, low leakage current and excellent storage stability; and a material for insulating film formation using the composition.
The composition comprises
(A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing at least one compound selected from the group consisting of
(A-1) compounds represented by the formula (1): R 1 a Si(OR 2 ) 4-a , and
(A-2) compounds represented by the formula (2): R 3 b (R 4 O) 3-b Si-(R 7 ) d -Si(OR 5 ) 3-c R 6 c ; and
(B) a compound represented by the formula (3): R 8 O(CHCH 3 CH 2 O) e R 9 .
The composition comprises
(A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing at least one compound selected from the group consisting of
(A-1) compounds represented by the formula (1): R 1 a Si(OR 2 ) 4-a , and
(A-2) compounds represented by the formula (2): R 3 b (R 4 O) 3-b Si-(R 7 ) d -Si(OR 5 ) 3-c R 6 c ; and
(B) a compound represented by the formula (3): R 8 O(CHCH 3 CH 2 O) e R 9 .
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