-
公开(公告)号：EP1245638B1
公开(公告)日：2009-01-14
申请号：EP02006789.8
申请日：2002-03-25
申请人： JSR Corporation
IPC分类号： C08L65/00 , C08L71/12 , C09D171/12 , C09D165/00 , C08G61/02 , C08G61/12 , H01L21/312
CPC分类号： H01L21/02126 , C08G61/02 , C08G61/12 , C08L65/00 , C08L71/123 , C09D171/12 , H01L21/312 , H05K3/4676 , C08L83/00
摘要： A composition for film formation capable of forming a coating film excellent in low dielectric constant characteristics, cracking resistance, modulus of elasticity, and adhesion to substrates and useful as an interlayer insulating film material in semiconductor devices, etc. The composition for film formation contains (A) at least one member selected from an aromatic polyarylene and an aromatic poly (arylene ether), (B) a polyvinylsiloxane, and (C) an organic solvent.
-
2.发明授权Diyne-containing (co) polymer, processes for producing the same, and cured film 有权含二炔共聚物，其生产过程中，与交联膜
公开(公告)号：EP1099719B1
公开(公告)日：2007-01-17
申请号：EP00124453.2
申请日：2000-11-08
申请人： JSR Corporation
发明人： Akiike, Toshiyuki , Patz, Matthias , Takahashi, Masayuki , Goto, Kohei , Nishikawa, Michinori , Okada, Takashi , Yamada, Kinji
IPC分类号： C08G61/02
-
3.发明授权Stacked film, method for the formation of stacked film, insulating film, and substrate for semiconductor 有权层叠膜，一种制造堆叠的层，绝缘层的方法，以及用于半导体衬底
公开(公告)号：EP1295924B1
公开(公告)日：2006-12-13
申请号：EP02021165.2
申请日：2002-09-24
申请人： JSR Corporation
IPC分类号： C09D183/04 , C09D183/14 , H01L21/312
CPC分类号： B05D1/60 , B05D7/52 , C09D183/04 , C09D183/14 , H01L21/02126 , H01L21/0214 , H01L21/022 , H01L21/02211 , H01L21/02216 , H01L21/02271 , H01L21/02282 , H01L21/3122 , Y10T428/24942 , Y10T428/31663
-
4.发明公开Dielectric-forming composition containing particles with perovskite crystal structure, production process and uses of the same, and process for preparing crystal particles having perovskite crystal structure 审中-公开电介质形成具有用于与钙钛矿晶体结构的结晶颗粒钙钛矿晶体结构，生产方法和用途，以及制造过程中的组合物包含颗粒
公开(公告)号：EP1513165A1
公开(公告)日：2005-03-09
申请号：EP04020931.4
申请日：2004-09-02
申请人： JSR Corporation
发明人： Yamada, Kinji , Shinoda, Tomotaka
IPC分类号： H01B3/12 , H01G4/12 , C04B35/468 , C04B41/50 , C01G23/00
CPC分类号： C04B35/4682 , B82Y30/00 , C01G23/006 , C01P2002/34 , C01P2002/72 , C01P2004/64 , C03C17/25 , C03C2217/23 , C03C2218/11 , C04B35/6264 , C04B35/63 , C04B35/632 , C04B41/009 , C04B41/5041 , C04B41/87 , C04B2111/00844 , C04B2235/02 , C04B2235/3215 , C04B2235/3232 , C04B2235/3236 , C04B2235/441 , C04B2235/449 , C04B2235/5445 , C04B2235/5454 , C04B2235/5481 , C04B2235/72 , H01G4/1209 , H01G4/1227 , C04B41/4539 , C04B41/4549 , C04B35/10 , C04B35/14 , C04B35/565 , C04B35/46 , C04B35/58 , C04B35/56 , C04B35/581
摘要： A dielectric-forming composition includes ABOx crystal particles 100 nm or less in mean particle diameter comprising specific metal species, and an organic solvent, and the composition satisfies at least one of the following conditions:
(i) the concentration of the metal species A in the liquid phase is 1 mol% or less; and
(ii) the water concentration in the composition is 1 wt% or less.
A process for producing ABOx crystal particles 100 nm or less in mean particle diameter comprising specific metal species, the process includes (I) a dissolution step in which a specific organometallic compound having the metal species A and a specific organometallic compound having the metal species B are dissolved in an organic solvent; (II) a hydrolysis step in which water is added to the solution prepared in the dissolution step to perform hydrolysis of a precursor in the solution to form crystal particles; and (III) a purification step in which the crystal particles obtained in the hydrolysis step are purified with an organic solvent.摘要翻译： 阿形成电介质组合物包括ABO晶体中的平均粒径的粒子为100nm以下，其包括特定金属物种，和有机溶剂的，并且所述组合物SATIS外资企业的以下条件中的至少一个：（i）所述金属物质A在浓度 液相为1摩尔％或更小; 和（ii）在该组合物中水的浓度为1重量％或更少。 一种用于制备晶体ABO过程中平均颗粒直径的颗粒100nm或更小，包括特定金属物种，所述方法包括（I）的溶解步骤，其中具有金属物种A和具有特定有机金属化合物的特定有机金属化合物 所述金属物质B被溶解在溶剂中，以有机; （II），其中水水解步骤中加入到在溶解步骤制备在溶液中形成的结晶粒子进行前体的水解的溶液; 和（III），其中获得在所述水解步骤中的晶体粒子的纯化步骤中与有机溶剂进行纯化。
-
公开(公告)号：EP0824127B1
公开(公告)日：2004-07-14
申请号：EP97114003.3
申请日：1997-08-13
申请人： JSR Corporation
IPC分类号： C08J3/03 , C09D183/10 , C09D143/04
CPC分类号： C08J3/07 , C08F8/42 , C09D143/04 , C09D183/10 , C08F220/14 , C08F2220/1825 , C08F230/08 , C08F220/06 , C08F2220/281 , C08F220/52 , C08F220/58 , C08F2220/1858 , C08F220/34 , C08F226/06
-
6.发明授权Polymer comprising acetylene repeating units, process for the production, composition for film formation containing the same, method of film formation and insulating film 有权含有重复单元乙炔基，用于制备用于膜形成，并且聚合物组合物的膜形成的方法和绝缘膜聚合物
公开(公告)号：EP1254917B1
公开(公告)日：2004-06-30
申请号：EP02009442.1
申请日：2002-04-25
申请人： JSR Corporation
发明人： Okada, Takashi , Sinohara, Noriyasu , Shirato, Kaori , Ebisawa, Masahiko , Nishikawa, Michinori , Yamada, Kinji
IPC分类号： C08G61/00 , C08F38/00 , C08F238/00
CPC分类号： C08G61/02 , C08G61/12 , Y10T428/31855
-
7.发明公开Polymer comprising acetylene repeating units, process for the production, composition for film formation containing the same, method of film formation and insulating film 有权含有重复单元乙炔基，用于制备用于膜形成，并且聚合物组合物的膜形成的方法和绝缘膜聚合物
公开(公告)号：EP1254917A1
公开(公告)日：2002-11-06
申请号：EP02009442.1
申请日：2002-04-25
申请人： JSR Corporation
发明人： Okada, Takashi , Sinohara, Noriyasu , Shirato, Kaori , Ebisawa, Masahiko , Nishikawa, Michinori , Yamada, Kinji
IPC分类号： C08G61/00 , C08F38/00 , C08F238/00
CPC分类号： C08G61/02 , C08G61/12 , Y10T428/31855
摘要： a composition for film formation which can be cured in a short time period and give a film having a low dielectric constant and excellent in heat resistance, adhesion and cracking resistance, a polymer for use in the composition and a process for producing the polymer. The composition prepared by dissolving the polymer having specific repeating units in a solvent has excellent film-forming properties. The polymer has repeating units represented by the following general formula (1):
wherein Z and Y are as defined hereinabove.摘要翻译： 对于膜形成用组合物，它可以在很短的时间内固化，得到具有耐热性，粘附力和耐破裂性，在组合物中使用的聚合物及其制造聚合物的方法具有低介电常数和优异的膜。 通过将聚合物溶解在溶剂中具有特定的重复单元中制备的组合物具有优异的成膜性质 - 。 该聚合物具有重复由以下通式表示的单元（1）：
worin Z和Y如hereinabove.t定义 -
公开(公告)号：EP1117102A2
公开(公告)日：2001-07-18
申请号：EP01100925.5
申请日：2001-01-16
申请人： JSR Corporation
发明人： Suzuki, Hidenori , Kakinoki, Katsuyuki , Nakase, Yoshihisa , Nishikawa, Michinori , Okada, Takashi , Yamada, Kinji
摘要： A method of manufacturing an insulating film-forming material comprising a curable composition comprisING (A) an inorganic polymer compound or an organic polymer compound and (B) an organic solvent, which comprises treating the curable composition with a zeta potential-producing filter material. Because the curable composition has a very small content of alkali metals and heavy metals, the composition is suitably used for the manufacture of materials for forming insulating films which have a wide variety of applications in the electronic field.
-
公开(公告)号：EP1160848B1
公开(公告)日：2011-10-05
申请号：EP01112412.0
申请日：2001-05-21
申请人： JSR Corporation
IPC分类号： H01L21/312 , H01L21/316
CPC分类号： H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L21/316 , Y10T428/31663
-
10.发明授权Composition for film formation, method of film formation, and silica-based film 有权涂覆用于成膜组合物中，电影制作和薄膜的方法，基于二氧化硅的
公开(公告)号：EP1253175B1
公开(公告)日：2006-10-11
申请号：EP02006787.2
申请日：2002-03-25
申请人： JSR Corporation
IPC分类号： C09D183/04 , C09D183/02 , C09D183/14 , H01L21/312 , C09D183/00
CPC分类号： H01L21/02126 , C09D183/04 , C09D183/14 , H01L21/02216 , H01L21/02282 , H01L21/3122
-
-
-
-
-
-
-
-
-
搜索结果
51 条记录 (耗时 0.024 秒)
