发明公开
EP1058310A2 Semiconductor device and manufacturing method thereof
审中-公开
Halbleiterbauelement und deren Herstellungsverfahren
- 专利标题： Semiconductor device and manufacturing method thereof
- 专利标题（中）： Halbleiterbauelement und deren Herstellungsverfahren
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申请号： EP00111706.8申请日： 2000-05-31
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公开(公告)号： EP1058310A2公开(公告)日： 2000-12-06
- 发明人: Yamazaki, Shunpei , Suzawa, Hideomi , Yamagata, Hirokazu
- 申请人： SEL SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 申请人地址： 398 Hase Atsugi-shi, Kanagawa-ken 243-0036 JP
- 专利权人： SEL SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人： SEL SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址： 398 Hase Atsugi-shi, Kanagawa-ken 243-0036 JP
- 代理机构： Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät
- 优先权： JP15443299 19990602
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L21/84
摘要：
In order to increase an aperture ratio, a part of or all of a gate electrode that overlaps with channel formation regions (213, 214) of a pixel TFT is caused to overlap with second wirings (source line or drain line) (154, 157). Additionally, a first interlayer insulating film (149) and a second interlayer insulating film (150c) are disposed between the gate electrode and the second wirings (154, 157) so as to decrease a parasitic capacitance.
公开/授权文献
- EP1058310A3 Semiconductor device and manufacturing method thereof 公开/授权日：2009-11-18
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