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    Film formation apparatus and method for forming a film
    5.
    发明公开
    Film formation apparatus and method for forming a film 有权
    Vorrichtung und Verfahren zum Bilden eines Films

    公开(公告)号：EP1113087A3

    公开(公告)日：2003-11-19

    申请号：EP00128521.2

    申请日：2000-12-27

    申请人： SEL SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    发明人： Yamazaki, Shunpei ,  Fukunaga, Takeshi

    IPC分类号： C23C14/24 ,  C23C14/56 ,  H05B33/12 ,  C23C14/04

    CPC分类号： C23C14/28 ,  B05D1/32 ,  B05D1/40 ,  B05D5/12 ,  C23C14/04 ,  C23C14/042 ,  C23C14/044 ,  C23C14/22 ,  C23C14/24 ,  C23C14/243 ,  C23C14/26 ,  C23C14/564 ,  H01L51/0008 ,  H01L51/0011 ,  H01L51/5012 ,  H01L51/56

    摘要： An apparatus for forming a film having high uniformity in its film thickness distribution is provided. An evaporation source (212) is used in which an evaporation cell (211), or a plurality of evaporation cells, having a longitudinal direction is formed, and by moving the evaporation source in a direction perpendicular to the longitudinal direction of the evaporation source, a thin film is deposited on a substrate (203). By making the evaporation source longer, the uniformity of the film thickness distribution in the longitudinal direction is increased. The evaporation source is moved, film formation is performed over the entire substrate, and therefore the uniformity of the film thickness distribution over the entire substrate can be increased.

    摘要翻译： 提供了一种用于形成膜厚分布均匀性高的膜的装置。 使用蒸发源（212），其中形成具有纵向方向的蒸发单元（211）或多个蒸发单元，并且通过沿垂直于蒸发源的纵向的方向移动蒸发源， 在衬底（203）上沉积薄膜。 通过使蒸发源更长，在纵向上的膜厚分布的均匀性增加。 移动蒸发源，在整个基板上进行成膜，因此能够提高整个基板上的膜厚分布的均匀性。

    A light emitting device and electronic apparatus using the same
    6.
    发明公开
    A light emitting device and electronic apparatus using the same 有权
    一种发光装置及使用该装置的电子装置

    公开(公告)号：EP1310939A2

    公开(公告)日：2003-05-14

    申请号：EP02021804.6

    申请日：2002-09-26

    申请人： SEL SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    发明人： Yamazaki, Shunpei ,  Koyama, Jun

    IPC分类号： G09G3/32

    CPC分类号： G09G3/3241 ,  G09G3/2014 ,  G09G3/3266 ,  G09G3/3275 ,  G09G2300/0809 ,  G09G2300/0814 ,  G09G2300/0828 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/027 ,  G09G2320/0285 ,  G09G2320/029 ,  G09G2320/043 ,  G09G2320/048

    摘要： Providing a light emitting device capable of suppressing the variations of luminance of OLEDs associated with the deterioration of an organic light emitting material, and achieving a consistent luminance. An input image signal is constantly or periodically sampled to sense a light emission period or displayed gradation level of each of light emitting elements of pixels and then, a pixel suffering the greatest deterioration and decreased luminance is predicted from the accumulations of the sensed values. A current supply to the target pixel is corrected for achieving a desired luminance. The other pixels than the target pixel are supplied with an excessive current and hence, the individual gradation levels of the pixels are lowered by correcting the image signal for driving the pixel with the deteriorated light emitting element on as-needed basis, the correction of the image signal made by comparing the accumulation of the sensed values of each of the other pixels with a previously stored data on a time-varying luminance characteristic of the light emitting element.

    摘要翻译： 提供能够抑制与有机发光材料的劣化相关的OLED的亮度变化并且实现一致的亮度的发光器件。 对输入图像信号进行恒定或周期性采样以感测像素的每个发光元件的发光时段或显示灰度级，然后根据感测值的积累预测遭受最大劣化和降低亮度的像素。 对目标像素的电流供应进行校正以实现期望的亮度。 除了目标像素之外的其他像素被供应过量的电流，并且因此，通过根据需要校正用于驱动具有劣化的发光元件的像素的图像信号来降低像素的单独灰度级， 通过将每个其他像素的感测值的累积与先前存储的关于发光元件的时变亮度特性的数据进行比较而获得图像信号。

    Semiconductor device and manufacturing method thereof
    8.
    发明公开
    Semiconductor device and manufacturing method thereof 审中-公开
    半导体装置及其制造方法

    公开(公告)号：EP1049167A2

    公开(公告)日：2000-11-02

    申请号：EP00108989.5

    申请日：2000-04-27

    申请人： SEL SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    发明人： Yamazaki, Shunpei

    IPC分类号： H01L27/12 ,  H01L21/84

    CPC分类号： H01L21/02675 ,  G02F1/13454 ,  H01L21/02672 ,  H01L21/2026 ,  H01L21/3003 ,  H01L27/1255 ,  H01L27/3244 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78645 ,  H01L2029/7863

    摘要： A semiconductor device having high operating performance and reliability, and a manufacturing method thereof are provided.
    An LDD region 207 provided in an n-channel TFT 302 forming a driving circuit enhances the tolerance for hot carrier injection. LDD regions 217 - 220 provided in an n-channel TFT (pixel TFT) 304 forming a pixel portion greatly contribute to the decrease in the OFF current value. Here, the LDD region of the n-channel TFT of the driving circuit is formed such that the concentration of the n-type impurity element becomes higher as the distance from an adjoining drain region decreases.

    摘要翻译： 提供了具有高操作性能和可靠性的半导体器件及其制造方法。 提供在形成驱动电路的n沟道TFT 302中的LDD区域207增强了热载流子注入的容限。 提供在形成像素部分的n沟道TFT（像素TFT）304中的LDD区域217-220极大地有助于减小截止电流值。 这里，驱动电路的n沟道TFT的LDD区域形成为使得随着与相邻漏极区域的距离减小，n型杂质元素的浓度变高。