发明授权
- 专利标题: SCHALTUNG ZUM ABSCHALTEN EINER MOSFET-ENDSTUFE
- 专利标题(英): Circuit for de-activating a mos transistor output stage
- 专利标题(中): 电路要关闭MOSFET功率放大器
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申请号: EP98947355.8申请日: 1998-07-28
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公开(公告)号: EP1072093B1公开(公告)日: 2002-05-08
- 发明人: TOPP, Rainer , MATERNA, Gerald , STREICHER, Günter , KOELSCH, Volker
- 申请人: ROBERT BOSCH GMBH
- 申请人地址: Postfach 30 02 20 70442 Stuttgart DE
- 专利权人: ROBERT BOSCH GMBH
- 当前专利权人: ROBERT BOSCH GMBH
- 当前专利权人地址: Postfach 30 02 20 70442 Stuttgart DE
- 优先权: DE19735541 19970816
- 国际公布: WO9909651 19990225
- 主分类号: H03K17/082
- IPC分类号: H03K17/082
摘要:
In order to prevent critical states of the operating condition of a MOS transistor output stage (1) the invention proposes using a circuit for de-activating said MOS transistor output stage (1), in particular a high power transistor, in the event of the occurrence of abnormal potentials on at least one monitored line (4), means being provided for controlling the MOS transistor output stage. The invention is characterised in that means (3) are also provided for monitoring the line (4). The MOS transistor output stage (1) can also be de-activated by means (3) for monitoring the line (4), independently of the means (2) for controlling the MOS transistor output stage (1) (de-activating path II).
公开/授权文献
- EP1072093A1 SCHALTUNG ZUM ABSCHALTEN EINER MOSFET-ENDSTUFE 公开/授权日:2001-01-31
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