发明公开
EP1077480A1 Method and apparatus to enchance properties of Si-O-C low K films
有权
Methode und Apparat zur Verbesserung der Eigenschaften eines niedrig-k Si-O-C Filmes
- 专利标题： Method and apparatus to enchance properties of Si-O-C low K films
- 专利标题（中）： Methode und Apparat zur Verbesserung der Eigenschaften eines niedrig-k Si-O-C Filmes
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申请号： EP99402076.6申请日： 1999-08-17
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公开(公告)号： EP1077480A1公开(公告)日： 2001-02-21
- 发明人: Xia, Li-Qun , Lim, Tian-Hoe , Gaillard, Frederic , Yieh, Ellie
- 申请人： Applied Materials, Inc.
- 申请人地址： 3050 Bowers Avenue Santa Clara, California 95054 US
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： 3050 Bowers Avenue Santa Clara, California 95054 US
- 代理机构： Bayliss, Geoffrey Cyril
- 主分类号： H01L21/316
- IPC分类号： H01L21/316 ; C23C16/30
摘要：
A method for providing a dielectric film having enhanced adhesion and stability.. Pre-deposition, post deposition and post cure treatments enhance adhesion of the dielectric film to an underlying substrate and overlying cap layer. The enhanced film is particularly useful as an intermetal or premetal dielectric layer in an integrated circuit. A pre-deposition treatment process with atomic hydrogen enhances film adhesion by reducing weakly bound oxides on the surface of the substrate. A post-deposition densification process in a reducing atmosphere enhances stability if the film is to be cured ex-situ. In a preferred embodiment, the layer a low dielectric constant film deposited from a process gas of ozone and an organosilane precursor having at least one silicon-carbon (Si-C) bond.
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