发明授权
EP1081747B1 Diamond PN junction diode and method for the fabrication thereof
有权
金刚石的PN结二极管和方法，用于制备它们的
- 专利标题： Diamond PN junction diode and method for the fabrication thereof
- 专利标题（中）： 金刚石的PN结二极管和方法，用于制备它们的
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申请号： EP00307456.4申请日： 2000-08-30
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公开(公告)号： EP1081747B1公开(公告)日： 2007-08-01
- 发明人: Takeuchi, Daisuke, Electrotechnical Laboratory , Watanbe, Hideyuki, Electrotechnical Laboratory , Okushi, Hideyo, Electrotechnical Laboratory , Hasegawa, Masataka, Electrotechnical Laboratory , Ogura, Masahiko, Electrotechnical Laboratory , Kobayashi, Naoto, Electrotechnical Laboratory , Kajimura, Koji, Electrotechnical Laboratory , Yamanaka, Sadanori, Japan Science and Techn. Corp.
- 申请人： National Institute of Advanced Industrial Science and Technology, Independent Administrative Institution , Japan Science and Technology Corporation
- 申请人地址： 3-1, Kasumigaseki 1-chome Chiyoda-ku Tokyo JP
- 专利权人： National Institute of Advanced Industrial Science and Technology, Independent Administrative Institution,Japan Science and Technology Corporation
- 当前专利权人： National Institute of Advanced Industrial Science and Technology, Independent Administrative Institution,Japan Science and Technology Corporation
- 当前专利权人地址： 3-1, Kasumigaseki 1-chome Chiyoda-ku Tokyo JP
- 代理机构： Smith, Norman Ian
- 优先权： JP24488399 19990831
- 主分类号： H01L21/04
- IPC分类号： H01L21/04 ; H01L29/861 ; H01S3/16
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