公开(公告)号：EP1081747B1

公开(公告)日：2007-08-01

申请号：EP00307456.4

申请日：2000-08-30

申请人： National Institute of Advanced Industrial Science and Technology, Independent Administrative Institution ,  Japan Science and Technology Corporation

发明人： Takeuchi, Daisuke, Electrotechnical Laboratory ,  Watanbe, Hideyuki, Electrotechnical Laboratory ,  Okushi, Hideyo, Electrotechnical Laboratory ,  Hasegawa, Masataka, Electrotechnical Laboratory ,  Ogura, Masahiko, Electrotechnical Laboratory ,  Kobayashi, Naoto, Electrotechnical Laboratory ,  Kajimura, Koji, Electrotechnical Laboratory ,  Yamanaka, Sadanori, Japan Science and Techn. Corp.

IPC分类号： H01L21/04 ,  H01L29/861 ,  H01S3/16

CPC分类号： H01L33/34 ,  H01L29/1602 ,  H01L29/6603 ,  H01L29/66136 ,  H01L29/861 ,  H01S5/3045 ,  H01S5/305

公开(公告)号：EP1081747A1

公开(公告)日：2001-03-07

申请号：EP00307456.4

申请日：2000-08-30

申请人： Agency of Industrial Science and Technology of Ministry of International Trade and Industry ,  Japan Science and Technology Corporation

发明人： Takeuchi, Daisuke, Electrotechnical Laboratory ,  Watanbe, Hideyuki, Electrotechnical Laboratory ,  Okushi, Hideyo, Electrotechnical Laboratory ,  Hasegawa, Masataka, Electrotechnical Laboratory ,  Ogura, Masahiko, Electrotechnical Laboratory ,  Kobayashi, Naoto, Electrotechnical Laboratory ,  Kajimura, Koji, Electrotechnical Laboratory ,  Yamanaka, Sadanori, Japan Science and Techn. Corp.

IPC分类号： H01L21/04 ,  H01L29/861 ,  H01S3/16

CPC分类号： H01L33/34 ,  H01L29/1602 ,  H01L29/6603 ,  H01L29/66136 ,  H01L29/861 ,  H01S5/3045 ,  H01S5/305

摘要： A diamond pn junction diode (20) includes a p -type diamond thin-film layer (21) formed on a substrate (11) and an n -type diamond thin-film layer (22) formed by forming a high-quality undoped diamond thin-film layer (22i) on the p -type diamond thin-film layer and ion-implanting an impurity into the high-quality undoped diamond thin-film layer, or alternatively includes an n -type diamond thin-film layer (22) formed on a substrate (11) and a p -type diamond thin-film layer (21) formed by forming a high-quality undoped diamond thin-film layer (22i) on the n -type diamond thin-film layer and ion-implanting an impurity into the high-quality undoped diamond thin-film layer. A method of fabricating a diamond pn junction diode (20) includes the steps of forming a p -type diamond thin-film layer (21) on a substrate (11), forming a high-quality undoped diamond thin-film layer (22i) on the p -type diamond thin-film layer, and making the high-quality undoped diamond thin-film layer an n -type diamond thin-film layer (22) by ion implantation of an impurity, or alternatively includes the steps of forming an n -type diamond thin-film layer (22) on a substrate (11), forming a high-quality undoped diamond thin-film layer (22i) on the n -type diamond thin-film layer, and making the high-quality undoped diamond thin-film layer a p -type diamond thin-film layer (21) by ion implantation of an impurity.

摘要翻译： 金刚石pn结二极管（20）包括形成在基板（11）上的p型金刚石薄膜层（21）和通过形成高质量未掺杂金刚石形成的n型金刚石薄膜层（22） 在p型金刚石薄膜层上的薄膜层（22i），并将杂质离子注入到高品质未掺杂的金刚石薄膜层中，或者还可以包括n型金刚石薄膜层（22） 形成在通过在n型金刚石薄膜层上形成高品质未掺杂的金刚石薄膜层（22i）而形成的基板（11）和p型金刚石薄膜层（21），以及离子注入 杂质进入高品质未掺杂的金刚石薄膜层。 制造金刚石pn结二极管（20）的方法包括以下步骤：在衬底（11）上形成p型金刚石薄膜层（21），形成高品质未掺杂金刚石薄膜层（22i） 在p型金刚石薄膜层上，通过离子注入杂质使高品质未掺杂的金刚石薄膜层成为n型金刚石薄膜层（22），或者还可以包括以下步骤： n型金刚石薄膜层（22），在n型金刚石薄膜层上形成高质量的未掺杂的金刚石薄膜层（22i），并使高质量的未掺杂的 金刚石薄膜层通过离子注入杂质形成p型金刚石薄膜层（21）。