发明公开
EP1093128A2 Data storage circuits using a low threshold voltage output enable circuit
有权
数据存储电路使用低阈值电压输出使能电路
- 专利标题: Data storage circuits using a low threshold voltage output enable circuit
- 专利标题(中): 数据存储电路使用低阈值电压输出使能电路
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申请号: EP00303330.5申请日: 2000-04-19
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公开(公告)号: EP1093128A2公开(公告)日: 2001-04-18
- 发明人: Bosshart, Patrick W.
- 申请人: Texas Instruments Incorporated
- 申请人地址: 7839 Churchill Way, Mail Station 3999 Dallas, Texas 75251 US
- 专利权人: Texas Instruments Incorporated
- 当前专利权人: Texas Instruments Incorporated
- 当前专利权人地址: 7839 Churchill Way, Mail Station 3999 Dallas, Texas 75251 US
- 代理机构: Legg, Cyrus James Grahame
- 优先权: US294280 19990419
- 主分类号: G11C7/10
- IPC分类号: G11C7/10
摘要:
A data storage circuit (30). The data storage circuit comprises a data input (12') for receiving a data voltage (D') and a node (17') for receiving an interim voltage in response to the data voltage. The data storage circuit also comprises an output enable circuit (32) for providing at least one conditional path coupled to the node and for coupling the interim voltage to the node. The output enable circuit comprises a transistor (32p) having a first threshold voltage and operable to provide a conductive path along the at least one conditional path. The data storage circuit also comprises a data output (19') for providing an output voltage in response to the interim voltage at the node and a data retention circuit coupled between the node and the data output. The data retention circuit (18' and 20') comprises at least one transistor having a second threshold voltage higher in magnitude than the first threshold voltage.
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