发明公开
- 专利标题: Electro-optical device and manufacturing method thereof
- 专利标题(中): 它们的电光学装置及其制造方法
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申请号: EP00122181.1申请日: 2000-10-12
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公开(公告)号: EP1093167A2公开(公告)日: 2001-04-18
- 发明人: Yamazaki, Shunpei , Yamamoto, Kunitaka , Arai, Yasuyuki
- 申请人: SEL SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 申请人地址: 398 Hase Atsugi-shi, Kanagawa-ken 243-0036 JP
- 专利权人: SEL SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人: SEL SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址: 398 Hase Atsugi-shi, Kanagawa-ken 243-0036 JP
- 代理机构: Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät
- 优先权: JP29031499 19991012
- 主分类号: H01L27/00
- IPC分类号: H01L27/00 ; H01L51/20 ; H01L51/40 ; H01L21/48
摘要:
The present invention aims to provide simple, high-speed processing for the formation of an EL layer by an ink-jet method. A method of manufacturing an electro-optical device having good operation performance and high reliability, and in particular, a method of manufacturing an EL display device, is provided. The present invention forms EL layers continuously across a plurality of pixels when the EL layers are formed by the ink-jet method. Specifically, with respect to m columns and n rows of pixel electrodes arranged in a matrix state, the EL layers are formed so as to form stripes with respect to one certain selected row or one column. The EL layers may also be formed having an oblong shape or a rectangular shape with respect to each pixel electrode.
公开/授权文献
- EP1093167B1 Electro-optical device and manufacturing method thereof 公开/授权日:2012-07-25
信息查询
IPC分类: