发明授权
EP1094470B1 Data line disturbance free memory block divided flash memory and microcomputer having flash memory therein
失效
在快闪存储器和微处理器与快闪存储器共享存储器块中的数据线的无干扰
- 专利标题: Data line disturbance free memory block divided flash memory and microcomputer having flash memory therein
- 专利标题(中): 在快闪存储器和微处理器与快闪存储器共享存储器块中的数据线的无干扰
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申请号: EP00121759.5申请日: 1993-03-11
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公开(公告)号: EP1094470B1公开(公告)日: 2003-08-13
- 发明人: Matsubara, Kiyoshi , Yashiki, Naoki , Baba, Shiro , Ito, Takashi , Mukai, Hirofumi , Sato, Masanao , Terasawa, Masaaki , Kuroda, Kenichi , Shiba, Kazuyoshi
- 申请人: Hitachi, Ltd. , HITACHI ULSI ENGINEERING CORP.
- 申请人地址: 6 Kanda Surugadai 4-chome Chiyoda-ku, Tokyo 101-8010 JP
- 专利权人: Hitachi, Ltd.,HITACHI ULSI ENGINEERING CORP.
- 当前专利权人: Hitachi, Ltd.,HITACHI ULSI ENGINEERING CORP.
- 当前专利权人地址: 6 Kanda Surugadai 4-chome Chiyoda-ku, Tokyo 101-8010 JP
- 代理机构: Strehl Schübel-Hopf & Partner
- 优先权: JP9191992 19920317; JP9390892 19920319
- 主分类号: G11C16/06
- IPC分类号: G11C16/06
摘要:
A semiconductor integrated circuit device comprises a central processing unit (CPU), a first external terminal (EA0-EA16), and an electrically erasable and programmable nonvolatile flash memory (FMRY), wherein the semiconductor integrated circuit has a first operation mode in which the flash memory receives an address signal from the central processing unit executing a control program to erase and write data from and into the flash memory, and wherein the semiconductor integrated circuit has a second operation mode in which the flash memory receives an address signal on the external terminal to write data supplied from the outside of the semiconductor integrated circuit device into the flash memory.
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