发明公开
EP1111412A1 Lateral trenching for cross coupling suppression in integrated optics chips 审中-公开
Laterales Graben zurUnterdrückungder Kreuzkopplung in integriert-optischen Chips

  • 专利标题: Lateral trenching for cross coupling suppression in integrated optics chips
  • 专利标题(中): Laterales Graben zurUnterdrückungder Kreuzkopplung in integriert-optischen Chips
  • 申请号: EP00311503.7
    申请日: 2000-12-20
  • 公开(公告)号: EP1111412A1
    公开(公告)日: 2001-06-27
  • 发明人: Gampp, Lorrie L.Martinez, Arthur R.
  • 申请人: Litton Systems
  • 申请人地址: 21240 Burbank Boulevard Woodland Hills, California 91367-6675 US
  • 专利权人: Litton Systems
  • 当前专利权人: Litton Systems
  • 当前专利权人地址: 21240 Burbank Boulevard Woodland Hills, California 91367-6675 US
  • 代理机构: Mackenzie, Andrew Bryan
  • 优先权: US471720 19991223
  • 主分类号: G02B6/122
  • IPC分类号: G02B6/122 G01C19/72
Lateral trenching for cross coupling suppression in integrated optics chips
摘要:
An optical waveguide network (11) is formed in a substrate (78) of an electrooptically active material. The optical waveguide network 11 has input and output facets (50, 52) where optical signals may be input to and output from the integrated optics chip (82). At least one lateral trench (84) is formed in the substrate (78). The lateral trench (84) is arranged to prevent light rays incident thereon from inside the substrate (78) from propagating to the output facet (52). The lateral trench (84) may be formed as a slot that extends toward the surface of the substrate (78) where the optical waveguide network (11) is formed, or the trench (84) may be parallel to the plane of the optical waveguides (11). The trench (84) may be formed in a surface (71, 77) that is either parallel or perpendicular to the plane of the optical waveguide network (11).
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