发明公开
- 专利标题： Diamond interconnection substrate and a manufacturing method therefor
- 专利标题（中）： 金刚石的Nexus基板及其制备
-
申请号： EP01300474.2申请日： 2001-01-19
-
公开(公告)号： EP1119045A3公开(公告)日： 2007-11-07
- 发明人: Nishibayashi, Yoshiki, c/o Itami Works , Matsuura, Takashi, c/o Itami Works , Imai, Takahiro, c/o Itami Works
- 申请人： Japan Fine Ceramics Center , Sumitomo Electric Industries, Ltd.
- 申请人地址： 4-1, Mutsuno 2-chome, Atsuta-ku Nagoya-shi, Aichi 456 JP
- 专利权人： Japan Fine Ceramics Center,Sumitomo Electric Industries, Ltd.
- 当前专利权人： Japan Fine Ceramics Center,Sumitomo Electric Industries, Ltd.
- 当前专利权人地址： 4-1, Mutsuno 2-chome, Atsuta-ku Nagoya-shi, Aichi 456 JP
- 代理机构： Cross, Rupert Edward Blount
- 优先权： JP2000010708 20000119
- 主分类号： H01L23/373
- IPC分类号： H01L23/373 ; H01L21/48 ; H01L23/498
摘要：
A diamond interconnection substrate (10) of the present invention includes a diamond substrate (1), and an implantation layer (2, 3, 4) constituted by the presence of metal elements having a thickness of at least 10 nm and a concentration of at least 10 20 cm -3 in the diamond substrate (1). The implantation layer (2, 3, 4) is formed by ion implanting metal elements with a high energy level of at least 1 MeV and a high dose of at least 10 16 cm -2 . Thus, a technique is provided by which a multi-layer interconnection is realized in the diamond having the highest thermal conductivity of all materials.
公开/授权文献
- EP1119045B1 Diamond interconnection substrate manufacturing method 公开/授权日：2010-06-30
信息查询
IPC分类:
