发明公开
- 专利标题: Improved programming method for a memory cell
- 专利标题(中): 用于存储单元的改进编程方法
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申请号: EP01106031.6申请日: 2001-03-12
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公开(公告)号: EP1137012A3公开(公告)日: 2003-09-03
- 发明人: Gerber, Donald S. , Shields, Jeffrey , Hewitt, Kent D. , Davies, David M
- 申请人: MICROCHIP TECHNOLOGY INC.
- 申请人地址: 2355 West Chandler Boulevard Chandler, AZ 85224-6199 US
- 专利权人: MICROCHIP TECHNOLOGY INC.
- 当前专利权人: MICROCHIP TECHNOLOGY INC.
- 当前专利权人地址: 2355 West Chandler Boulevard Chandler, AZ 85224-6199 US
- 代理机构: Patry, Didier Marcel Pierre
- 优先权: US617280 20000717; US191225P 20000322
- 主分类号: G11C16/10
- IPC分类号: G11C16/10 ; G11C16/14
摘要:
A method of writing and selectively erasing bits in a selected group of memory cells that significantly reduces the likelihood of disturbing data stored in other, non-selected groups of memory cells is disclosed. The method varies the bias voltages applied to bit lines in unselected cells depending upon the selected or non-selected state of the cells. This reduces the voltage differential applied to the unselected cells, reducing the possibility of inadvertently causing unwanted changes in the amount of charge stored on the respective floating gates of the unselected cells. The method of the present invention improves electrical isolation between columns of cells without increasing the distance between the cells.
公开/授权文献
- EP1137012B1 Improved programming method for a memory cell 公开/授权日:2006-08-23
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