发明授权
- 专利标题： FERROELEKTRISCHER TRANSISTOR UND VERFAHREN ZU DESSEN HERSTELLUNG
- 专利标题（英）： Ferroelectric transistor and method for the production thereof
- 专利标题（中）： FERRO电晶体管和方法及其
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申请号： EP99963195.5申请日： 1999-11-03
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公开(公告)号： EP1138084B1公开(公告)日： 2005-07-06
- 发明人: HANEDER, Thomas-Peter , WILLER, Josef , BRAUN, Georg , SCHLÖSSER, Till
- 申请人： Infineon Technologies AG
- 申请人地址： St.-Martin-Strasse 53 81669 München DE
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： St.-Martin-Strasse 53 81669 München DE
- 代理机构： Wilhelm, Jürgen, Dipl.-Phys.
- 优先权： DE19850852 19981104
- 国际公布： WO2000026969 20000511
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/51
摘要：
A ferroelectric transistor with two source/drain areas (2) and a channel area (3) arranged therebetween in a semiconductor substrate (1). A metal intermediate layer (4) is disposed on the surface of the channel area (3) whereby said intermediate layer forms a Schottky diode with the semiconductor substrate (1) and a ferroelectric layer (5) and a gate electrode (6) are arranged on the surface thereof. The ferroelectric transistor is produced in various steps using silicon process technology.
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