发明公开
- 专利标题： MIKROELEKTRONISCHE STRUKTUR
- 专利标题（英）： Microelectronic structure
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申请号： EP99964386.9申请日： 1999-12-01
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公开(公告)号： EP1149408A1公开(公告)日： 2001-10-31
- 发明人: BRUCHHAUS, Rainer , MAZURE-ESPEJO, Carlos , PRIMIG, Robert
- 申请人： Infineon Technologies AG
- 申请人地址： St.-Martin-Strasse 53 81669 München DE
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： St.-Martin-Strasse 53 81669 München DE
- 代理机构： Ginzel, Christian
- 优先权： DE19857039 19981210
- 国际公布： WO0034988 20000615
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
Disclosed is a microelectronic structure comprising a first conductive layer (20, 25) which prevents an oxygen diffusion at said structure. According to the invention, the first conductive layer (20, 25) consists of a base material and at least one oxygen-binding admixture which is provided with at least one element from the fourth subgroup or lanthane group. In a preferred embodiment, the microelectronic structure is used in semiconductor storage components with a metal oxide dielectric as condenser dielectric.
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