公开(公告)号：EP1153424A1

公开(公告)日：2001-11-14

申请号：EP99967896.4

申请日：1999-12-22

申请人： Infineon Technologies AG

发明人： NAGEL, Nicolas ,  PRIMIG, Robert ,  KASKO, Igor ,  BRUCHHAUS, Rainer ,  WENDT, Hermann

IPC分类号： H01L21/285

CPC分类号： H01L28/75 ,  H01L21/28568 ,  H01L28/55 ,  H01L28/60

摘要： The invention relates to a microelectronic structure. In said structure, an oxygen-containing iridium layer (25) is embedded between a silicon-containing layer (8, 20) and an oxygen barrier layer (30). Said iridium layer is especially produced by a sputter process in an oxygen atmosphere with a low oxygen content. The oxygen-containing iridium layer (25) is stable at temperatures up to 800 °C and withstands the formation of iridium silicide upon contact with the silicon-containing layer (20). Such microelectronic structures are preferably used in semiconductor memories.

公开(公告)号：EP0931333B1

公开(公告)日：2002-11-27

申请号：EP97910214.2

申请日：1997-09-19

申请人： Infineon Technologies AG

发明人： HARTNER, Walter ,  SCHINDLER, Günther ,  BRUCHHAUS, Rainer ,  PRIMIG, Robert

IPC分类号： H01L21/3205 ,  H01L27/115

CPC分类号： H01L27/11502 ,  H01L21/02197 ,  H01L21/02266 ,  H01L21/31691

摘要： The invention concerns a multi-step process. Stage one consists of sputtering the coating at a low temperature. Stage two involves application of an RTP process in an inert atmosphere at a medium or high temperature. In stage three the coating is tempered in an atmosphere containing oxygen at a low or medium temperature. Temperature load is significantly reduced in comparison with conventional processes so that when this process is used to produce an integrated memory cell oxidation of an underlying barrier coating can be prevented.

公开(公告)号：EP1149408A1

公开(公告)日：2001-10-31

申请号：EP99964386.9

申请日：1999-12-01

申请人： Infineon Technologies AG

发明人： BRUCHHAUS, Rainer ,  MAZURE-ESPEJO, Carlos ,  PRIMIG, Robert

IPC分类号： H01L21/02

CPC分类号： H01L28/75 ,  H01L28/55 ,  H01L28/60

摘要： Disclosed is a microelectronic structure comprising a first conductive layer (20, 25) which prevents an oxygen diffusion at said structure. According to the invention, the first conductive layer (20, 25) consists of a base material and at least one oxygen-binding admixture which is provided with at least one element from the fourth subgroup or lanthane group. In a preferred embodiment, the microelectronic structure is used in semiconductor storage components with a metal oxide dielectric as condenser dielectric.

摘要翻译： 公开了一种微电子结构，其包括防止在所述结构处氧扩散的第一导电层（20,25）。 根据本发明，第一导电层（20,25）由基础材料和至少一种提供有来自第四小组或至少一种甲烷的至少一种元素的氧结合混合物组成。 在一个优选实施例中，微电子结构被用于具有金属氧化物电介质作为电容器电介质的半导体存储元件中。