发明授权
- 专利标题: Method for fabricating a semiconductor device
- 专利标题(中): 的半导体装置的制造方法
-
申请号: EP01118887.7申请日: 1995-10-09
-
公开(公告)号: EP1154434B1公开(公告)日: 2005-12-21
- 发明人: Mori, Toshiki , Nakao, Ichiro , Fujita, Tsutomu , Segawa, Reiji
- 申请人: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 申请人地址: 1006, Oaza-Kadoma Kadoma-shi, Osaka 571-8501 JP
- 专利权人: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人地址: 1006, Oaza-Kadoma Kadoma-shi, Osaka 571-8501 JP
- 代理机构: Balsters, Robert
- 优先权: JP24531294 19941011
- 主分类号: G11C5/02
- IPC分类号: G11C5/02
摘要:
The semiconductor device of the invention includes a plurality of circuit blocks including a first circuit block and a second circuit block, a block parameter of the first circuit block being different from a block parameter of the second circuit block. In the semiconductor device, the first circuit block is formed on a first semiconductor chip, and the second circuit block is formed on a second semiconductor chip and is electrically connected with the first circuit block.
公开/授权文献
信息查询