The present invention is directed to a main element of a surge protector device and its fabrication method which uses breakdown phenomenon of a single high resistive film. A breakdown voltage and a place where breakdown occurs can be precisely controlled. The surge protector device changes from its non-conductive state to conductive state very quickly when a surge is induced and returns quickly to the non-conductive state when a surge is removed if said element is surrounded by oxidizing agent. The main element of the surge protector device of the present invention has a single high resistive film on a single metal bar. The high resistive film has a part or parts where electric field concentrates when a surge induced. A breakdown voltage can be controlled precisely by controlling a size including a thickness of the high resistive film of the part. The part is called a fuse part. The main element includes also at least two parts on said metal bar which are continuous to said fuse part. Electrodes are formed on said at least two parts. Therefore said at least two parts are called pad parts.