公开(公告)号：EP1187278A3

公开(公告)日：2005-07-06

申请号：EP01119750.6

申请日：2001-08-28

申请人： Katoda, Takashi

发明人： Katoda, Takashi

IPC分类号： H01T4/12 ,  H01T21/00

CPC分类号： H01T4/12 ,  H01T21/00

摘要： The present invention is directed to a main element of a surge protector device and its fabrication method which uses breakdown phenomenon of a single high resistive film. A breakdown voltage and a place where breakdown occurs can be precisely controlled. The surge protector device changes from its non-conductive state to conductive state very quickly when a surge is induced and returns quickly to the non-conductive state when a surge is removed if said element is surrounded by oxidizing agent. The main element of the surge protector device of the present invention has a single high resistive film on a single metal bar. The high resistive film has a part or parts where electric field concentrates when a surge induced. A breakdown voltage can be controlled precisely by controlling a size including a thickness of the high resistive film of the part. The part is called a fuse part. The main element includes also at least two parts on said metal bar which are continuous to said fuse part. Electrodes are formed on said at least two parts. Therefore said at least two parts are called pad parts.

公开(公告)号：EP1482564A1

公开(公告)日：2004-12-01

申请号：EP04011665.9

申请日：2004-05-17

申请人： Katoda, Takashi

发明人： Katoda, Takashi

IPC分类号： H01L31/0264 ,  H01L33/00

CPC分类号： H01L33/26 ,  H01L31/0264 ,  H01S5/32 ,  H01S5/327

摘要： The present invention is directed to photonic devices which emit or absorb light with a wavelength shorter than that GaN photonic devices can emit or absorb.
The devices according to the present invention are formed using molybdenum oxide of a high purity as a light emitting region or a light absorbing region. New inexpensive photonic devices which emit light with a wavelength from blue to deep ultraviolet rays are realized.
The devices according to the present invention can be formed at a temperature relating low such as 700°C.

摘要翻译： 半导体光器件包括由氧化钼制成的发光或光吸收区域。 独立权利要求包括：（1）在基底（2）上包含氧化钼层（3）的发光二极管（1），氧化钼层上的n型钼（5）层和p型钼层 氧化物（6）在n型氧化钼上; 和（2）在基板上包含氧化钼层的激光二极管，在氧化钼层上由n型半导体构成的第一包层，第一包层上的p型氧化钼的有源层和p型半导体层的第二包层 带隙大于氧化钼。 第一包层具有比第一包层上的氧化钼更大的带隙。

公开(公告)号：EP1652957A3

公开(公告)日：2006-12-06

申请号：EP05023406.1

申请日：2005-10-26

申请人： Katoda, Takashi

发明人： Katoda, Takashi

IPC分类号： C23C8/10 ,  H01L21/365

CPC分类号： C23C8/10 ,  C23C14/083 ,  C30B25/18 ,  C30B29/16 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02631

摘要： The present invention is directed to a new semiconductor film comprising of metal oxide grown on a substrate and its fabrication method.
The metal oxide is comprised of molybdenum oxide which is very useful to fabricate electronic devices with high withstand voltages and photonic and electronic hostile- environment devices. An important aspect of the present invention is that the molybdenum oxide film is formed on a substrate made of material which has been used in usual electronic and photonic devices. The most popular material is silicon. Another important aspect of the present invention is a new method to form a molybdenum oxide film on a substrate.

公开(公告)号：EP1204184A2

公开(公告)日：2002-05-08

申请号：EP01125059.4

申请日：2001-10-22

申请人： Katoda, Takashi

发明人： Katoda, Takashi

IPC分类号： H01S5/18 ,  H01L29/12 ,  H01L21/335

CPC分类号： H01L27/088 ,  H01S5/0425 ,  H01S5/06203 ,  H01S5/2081 ,  H01S5/22 ,  H01S5/2275

摘要： The present invention relates to devices each of which has an ultra-micro structure formed using a focused ion beam (FIB). In many cases, the structure has a shape of plate standing itself on a substrate. Although typical examples of the devices according to the present invention are a field effect transistor and a laser diode, the present invention is not limited to only such devices. The field effect transistors and the laser diodes according to the present invention have new functions or improved characteristics.

摘要翻译： 本发明涉及具有使用聚焦离子束（FIB）形成的超微结构的器件。 在许多情况下，该结构具有在基板上自身的板状。 虽然根据本发明的装置的典型实例是场效应晶体管和激光二极管，但是本发明不限于这种装置。 根据本发明的场效晶体管和激光二极管具有新的功能或改进的特性。

公开(公告)号：EP1487022A3

公开(公告)日：2008-02-20

申请号：EP04012914.0

申请日：2004-06-01

申请人： Katoda, Takashi

发明人： Katoda, Takashi

IPC分类号： H01L29/22 ,  H01L29/227 ,  H01L29/732 ,  H01L29/74 ,  H01L29/812

CPC分类号： H01L29/227 ,  H01L29/22 ,  H01L29/45 ,  H01L29/47 ,  H01L29/732 ,  H01L29/74 ,  H01L29/812

摘要： The present invention is directed to electronic devices comprising high-purity molybdenum oxide in at least a part of the devices.
The devices according to the present invention such as a bipolar transistor, a field effect transistor and a thyristor have a high withstand voltage. The present invention is directed also hostile-environment electron devices formed using high-purity molybdenum oxide.
The devices according to the present invention can be fabricated at a relatively lower temperature such as 700°C than that at which GaN or SiC devices are fabricated, that is a temperature higher 1000°C.

公开(公告)号：EP1652957A2

公开(公告)日：2006-05-03

申请号：EP05023406.1

申请日：2005-10-26

申请人： Katoda, Takashi

发明人： Katoda, Takashi

IPC分类号： C23C8/10 ,  H01L21/365

CPC分类号： C23C8/10 ,  C23C14/083 ,  C30B25/18 ,  C30B29/16 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02631

摘要： The present invention is directed to a new semiconductor film comprising of metal oxide grown on a substrate and its fabrication method.
The metal oxide is comprised of molybdenum oxide which is very useful to fabricate electronic devices with high withstand voltages and photonic and electronic hostile- environment devices. An important aspect of the present invention is that the molybdenum oxide film is formed on a substrate made of material which has been used in usual electronic and photonic devices. The most popular material is silicon. Another important aspect of the present invention is a new method to form a molybdenum oxide film on a substrate.

摘要翻译： 本发明涉及一种由在基板上生长的金属氧化物构成的新的半导体膜及其制造方法。 金属氧化物由氧化钼组成，其对于制造具有高耐受电压的电子器件和光子和电子敌对环境装置非常有用。 本发明的一个重要方面是，氧化钼膜形成在由通常的电子和光子器件中使用的材料制成的基板上。 最受欢迎的材料是硅。 本发明的另一个重要方面是在衬底上形成氧化钼膜的新方法。

公开(公告)号：EP1204184A3

公开(公告)日：2004-12-15

申请号：EP01125059.4

申请日：2001-10-22

申请人： Katoda, Takashi

发明人： Katoda, Takashi

IPC分类号： H01S5/062 ,  H01L29/786 ,  H01L21/336

CPC分类号： H01L27/088 ,  H01S5/0425 ,  H01S5/06203 ,  H01S5/2081 ,  H01S5/22 ,  H01S5/2275

摘要： The present invention relates to devices each of which has an ultra-micro structure formed using a focused ion beam (FIB). In many cases, the structure has a shape of plate standing itself on a substrate. Although typical examples of the devices according to the present invention are a field effect transistor and a laser diode, the present invention is not limited to only such devices. The field effect transistors and the laser diodes according to the present invention have new functions or improved characteristics.

公开(公告)号：EP1983070B1

公开(公告)日：2014-08-13

申请号：EP08014153.4

申请日：2005-10-26

申请人： Katoda, Takashi

发明人： Katoda, Takashi

IPC分类号： C23C14/08 ,  C30B25/18 ,  C23C8/10 ,  H01L21/02 ,  C30B29/16

CPC分类号： C23C8/10 ,  C23C14/083 ,  C30B25/18 ,  C30B29/16 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02631

公开(公告)号：EP1983070A3

公开(公告)日：2009-04-15

申请号：EP08014153.4

申请日：2005-10-26

申请人： Katoda, Takashi

发明人： Katoda, Takashi

IPC分类号： C23C8/10 ,  H01L21/365

CPC分类号： C23C8/10 ,  C23C14/083 ,  C30B25/18 ,  C30B29/16 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02631

摘要： The present invention is directed to a new semiconductor film comprising of metal oxide grown on a substrate and its fabrication method.
The metal oxide is comprised of molybdenum oxide which is very useful to fabricate electronic devices with high withstand voltages and photonic and electronic hostile- environment devices. An important aspect of the present invention is that the molybdenum oxide film is formed on a substrate made of material which has been used in usual electronic and photonic devices. The most popular material is silicon. Another important aspect of the present invention is a new method to form a molybdenum oxide film on a substrate.

公开(公告)号：EP1684355A3

公开(公告)日：2009-03-18

申请号：EP06000614.5

申请日：2006-01-12

申请人： Katoda, Takashi

发明人： Katoda, Takashi

IPC分类号： H01L29/24 ,  H01L29/73 ,  H01L29/74 ,  H01L29/76 ,  H01L29/78 ,  H01L29/80 ,  H01L29/86

CPC分类号： H01L29/267 ,  H01L29/22 ,  H01L29/24 ,  H01L29/45 ,  H01L29/47 ,  H01L29/732 ,  H01L29/74 ,  H01L29/812

摘要： The present invention relates to semiconductor electronic devices including molybdenum oxide formed on substrates which consist of materials which are used in known semiconductor electronic devices.
The present invention relates to also a new method to fabricate said electronic devices on substrates made of materials which have been used in usual electronic and photonic devices.
Suitable substrates consist of materials such as element semiconductors such as silicon and germanium, III- V compound semiconductors such as gallium arsenide and gallium phosphide, ll-IV compound semiconductors such as zinc oxide, IV compound semiconductors, organic semiconductors, metal crystals and their derivatives or glasses.