发明公开
EP1195902A3 Semiconductor integrated circuit with reduced leakage current
有权
Integrierte Halbleiterschaltung mit reduziertem Leckstrom
- 专利标题： Semiconductor integrated circuit with reduced leakage current
- 专利标题（中）： Integrierte Halbleiterschaltung mit reduziertem Leckstrom
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申请号： EP01122513.3申请日： 2001-09-21
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公开(公告)号： EP1195902A3公开(公告)日： 2003-05-21
- 发明人: Furusawa, Toshiyuki , Sonoda, Daisuke , Usami, Kimiyoshi , Kawabe, Naoyuki , Koizumi, Masayuki , Zama, Hidemasa , Kanazawa, Masahiro
- 申请人： Kabushiki Kaisha Toshiba
- 申请人地址： 1-1, Shibaura 1-chome, Minato-ku Tokyo JP
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： 1-1, Shibaura 1-chome, Minato-ku Tokyo JP
- 代理机构： HOFFMANN - EITLE
- 优先权： JP2000295234 20000927
- 主分类号： H03K19/00
- IPC分类号： H03K19/00
摘要：
A combination circuit (11) is switched between an active state where power is supplied thereto in response to a control signal and an inactive state where power thereto is interrupted. A flip-flop circuit (13) connected to an input terminal of the combination circuit stores an output signal of the combination circuit in response to a clock signal. The combination circuit (11) is set to an operative state by the control signal immediately before the flip-flop circuit (13) operates in response to the clock signal.
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