发明公开
EP1204141A2 Method for forming interconnects and semiconductor device
审中-公开
Verfahren zur Herstellung von leitenden Verbindungen und Halbleitervorrichtung
- 专利标题： Method for forming interconnects and semiconductor device
- 专利标题（中）： Verfahren zur Herstellung von leitenden Verbindungen und Halbleitervorrichtung
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申请号： EP01126114.6申请日： 2001-11-02
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公开(公告)号： EP1204141A2公开(公告)日： 2002-05-08
- 发明人: Inoue, Hiroaki , Mishima, Koji , Kato, Takao , Nakamura, Kenji , Matsumoto, Moriji
- 申请人： EBARA CORPORATION
- 申请人地址： 11-1, Haneda Asahi-cho Ohta-ku, Tokyo JP
- 专利权人： EBARA CORPORATION
- 当前专利权人： EBARA CORPORATION
- 当前专利权人地址： 11-1, Haneda Asahi-cho Ohta-ku, Tokyo JP
- 代理机构： Wagner, Karl H., Dipl.-Ing.
- 优先权： JP2000335585 20001102
- 主分类号： H01L21/768
- IPC分类号： H01L21/768
摘要：
There is provided a method for forming interconnects by filling a conductive metal into fine recesses formed in the surface of a substrate, comprising: forming an underlying film on the surface of the substrate, the film comprising at least two kinds of metals; and conducting wet plating of the conductive metal onto the surface of the underlying film. The method can form a defect-free, completely embedded interconnects of a conductive material in recesses, even when the recesses are of a high aspect ratio.
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