发明公开
EP1204184A3 Electronic and photonic devices having ultra-micro structures fabricated with a focused ion beam 审中-公开
具有由聚焦离子束产生的超微结构的电子和光子器件

  • 专利标题: Electronic and photonic devices having ultra-micro structures fabricated with a focused ion beam
  • 专利标题(中): 具有由聚焦离子束产生的超微结构的电子和光子器件
  • 申请号: EP01125059.4
    申请日: 2001-10-22
  • 公开(公告)号: EP1204184A3
    公开(公告)日: 2004-12-15
  • 发明人: Katoda, Takashi
  • 申请人: Katoda, Takashi
  • 申请人地址: 4804-83, Ikku Kochi-shi, Kochi 780-8130 JP
  • 专利权人: Katoda, Takashi
  • 当前专利权人: Katoda, Takashi
  • 当前专利权人地址: 4804-83, Ikku Kochi-shi, Kochi 780-8130 JP
  • 代理机构: Patentanwälte Leinweber & Zimmermann
  • 优先权: JP2000336404 20001102
  • 主分类号: H01S5/062
  • IPC分类号: H01S5/062 H01L29/786 H01L21/336
Electronic and photonic devices having ultra-micro structures fabricated with a focused ion beam
摘要:
The present invention relates to devices each of which has an ultra-micro structure formed using a focused ion beam (FIB). In many cases, the structure has a shape of plate standing itself on a substrate. Although typical examples of the devices according to the present invention are a field effect transistor and a laser diode, the present invention is not limited to only such devices. The field effect transistors and the laser diodes according to the present invention have new functions or improved characteristics.
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