发明公开
- 专利标题： VERFAHREN ZUR HERSTELLUNG EINES BIPOLARTRANSISTORS UND VERFAHREN ZUR HERSTELLUNG EINER INTEGRIERTEN SCHALTUNGSANORDNUNG MIT EINEM SOLCHEN BIPOLARTRANSISTOR
- 专利标题（英）： Method for producing a bipolar transistor and method for producing an integrated circuit arrangement with such a bipolar transistor
- 专利标题（中）： 用于生产双极晶体管及其制造方法，集成电路装置这样的双极型晶体管
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申请号： EP00985129.6申请日： 2000-12-01
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公开(公告)号： EP1234329A1公开(公告)日： 2002-08-28
- 发明人: BOECK, Josef , KLEIN, Wolfgang , SCHAEFER, Herbert , FRANOSCH, Martin , STENGL, Reinhard , MEISTER, Thomas
- 申请人： Infineon Technologies AG
- 申请人地址： St.-Martin-Strasse 53 81669 München DE
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： St.-Martin-Strasse 53 81669 München DE
- 代理机构： Zimmermann & Partner
- 优先权： DE19958062 19991202
- 国际公布： WO01041205 20010607
- 主分类号： H01L21/331
- IPC分类号： H01L21/331
摘要：
The bipolar transistor is produced in such a way that a connecting region of its base (B) is fitted with a silicide layer (SD) so that a base resistor of the bipolar transistor is small. No silicide layer is produced between an emitter (E) and a contact (KE) of said emitter (E) and between a connecting region (A) of a collector (C) and a contact (K3) of said collector (C). The base (B) is produced by in-situ doped epitaxy in a region in which a first insulating layer (I1) is removed by isotropic etching so that the connecting region of the base (B) disposed on the first insulating layer (I1) is underetched. In order to prevent defects of a substrate (1) in which the bipolar transistor is partly produced, isotropic etching is used to structure auxiliary layers (H1, H3), whereby etching is performed selectively with respect to the auxiliary layers (H2, SP) disposed thereon, which are structured by anisotropic etching.
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