公开(公告)号：EP1611615A1

公开(公告)日：2006-01-04

申请号：EP04726497.3

申请日：2004-04-08

申请人： Infineon Technologies AG

发明人： BOECK, Josef ,  MEISTER, Thomas ,  STENGL, Reinhard ,  SCHAEFER, Herbert

IPC分类号： H01L29/732 ,  H01L29/737 ,  H01L21/331 ,  H01L29/06

CPC分类号： H01L29/66287 ,  H01L29/0649 ,  H01L29/66242 ,  H01L29/732 ,  H01L29/7378

摘要： The invention relates to a method for producing a bipolar semiconductor element, especially a bipolar transistor, and a corresponding bipolar semiconductor component. The inventive method comprises the following steps: a first semiconductor area (32, 34) of a first conductivity type (p) is provided above a semiconductor substrate (1); a connecting area (40) of the first conductivity type (p+) is provided above the semiconductor area (32, 34); a first insulating area (35') is provided above the connecting area (40); a window (F) is formed within the first insulating area (35') and the connecting area (40) so as to at least partly expose the semiconductor area (32, 34); a sidewall spacer (80) is provided in the window (F) in order to insulate the connecting area (40); a second semiconductor area (60) of the second conductivity type (n+) is provided so as to cover the sidewall spacer (80) and a portion of the surrounding first insulating area (35'); the surrounding first insulating area (35') and the sidewall spacer (80) are removed in order to form a gap (LS) between the connecting area (40) and the second semiconductor area (60); and the gap (LS) is sealed by means of a second insulating area (100) while a gaseous atmosphere or a vacuum atmosphere is provided inside the sealed gap (LS).

公开(公告)号：EP1436840A2

公开(公告)日：2004-07-14

申请号：EP02774544.7

申请日：2002-08-30

申请人： Infineon Technologies AG

发明人： BOECK, Josef ,  MEISTER, Thomas ,  SCHAEFER, Herbert ,  STENGL, Reinhard

IPC分类号： H01L27/082

CPC分类号： H01L21/84 ,  H01L21/76264 ,  H01L27/1203

摘要： The invention concerns a semiconductor structure comprising a substrate (10), a layer (18) for components arranged on one surface (12) of the substrate (10), a bipolar transistor (30a) and a semiconductor component (30b) which are arranged in the layer for components and an insulating layer (60, 62, 64, 66, 68) which is adjacent to the bipolar transistor (30a) and to the semiconductor component (30b), which completely fills an intermediate gap (102) separating the bipolar conductor (30a) from the semiconductor component (30b) and which has an electrically insulating material.

公开(公告)号：EP1611615B1

公开(公告)日：2011-08-31

申请号：EP04726497.3

申请日：2004-04-08

申请人： Infineon Technologies AG

发明人： BOECK, Josef ,  MEISTER, Thomas ,  STENGL, Reinhard ,  SCHAEFER, Herbert

IPC分类号： H01L29/732 ,  H01L29/737 ,  H01L21/331 ,  H01L29/06

CPC分类号： H01L29/66287 ,  H01L29/0649 ,  H01L29/66242 ,  H01L29/732 ,  H01L29/7378

摘要： The invention relates to a method for producing a bipolar semiconductor element, especially a bipolar transistor, and a corresponding bipolar semiconductor component. The inventive method comprises the following steps: a first semiconductor area (32, 34) of a first conductivity type (p) is provided above a semiconductor substrate (1); a connecting area (40) of the first conductivity type (p+) is provided above the semiconductor area (32, 34); a first insulating area (35') is provided above the connecting area (40); a window (F) is formed within the first insulating area (35') and the connecting area (40) so as to at least partly expose the semiconductor area (32, 34); a sidewall spacer (80) is provided in the window (F) in order to insulate the connecting area (40); a second semiconductor area (60) of the second conductivity type (n+) is provided so as to cover the sidewall spacer (80) and a portion of the surrounding first insulating area (35'); the surrounding first insulating area (35') and the sidewall spacer (80) are removed in order to form a gap (LS) between the connecting area (40) and the second semiconductor area (60); and the gap (LS) is sealed by means of a second insulating area (100) while a gaseous atmosphere or a vacuum atmosphere is provided inside the sealed gap (LS).

公开(公告)号：EP1356527B1

公开(公告)日：2010-02-03

申请号：EP02714145.6

申请日：2002-02-04

申请人： Infineon Technologies AG

发明人： FRANOSCH, Martin ,  MEISTER, Thomas ,  SCHAEFER, Herbert ,  STENGL, Reinhard

IPC分类号： H01L29/737 ,  H01L21/331

CPC分类号： H01L29/66242 ,  H01L29/7378

公开(公告)号：EP1436840B1

公开(公告)日：2005-12-21

申请号：EP02774544.7

申请日：2002-08-30

申请人： Infineon Technologies AG

发明人： BOECK, Josef ,  MEISTER, Thomas ,  SCHAEFER, Herbert ,  STENGL, Reinhard

IPC分类号： H01L27/082

CPC分类号： H01L21/84 ,  H01L21/76264 ,  H01L27/1203

摘要： The invention concerns a semiconductor structure comprising a substrate (10), a layer (18) for components arranged on one surface (12) of the substrate (10), a bipolar transistor (30a) and a semiconductor component (30b) which are arranged in the layer for components and an insulating layer (60, 62, 64, 66, 68) which is adjacent to the bipolar transistor (30a) and to the semiconductor component (30b), which completely fills an intermediate gap (102) separating the bipolar conductor (30a) from the semiconductor component (30b) and which has an electrically insulating material.

公开(公告)号：EP1356527A1

公开(公告)日：2003-10-29

申请号：EP02714145.6

申请日：2002-02-04

申请人： Infineon Technologies AG

发明人： FRANOSCH, Martin ,  MEISTER, Thomas ,  SCHAEFER, Herbert ,  STENGL, Reinhard

IPC分类号： H01L29/737 ,  H01L21/331

CPC分类号： H01L29/66242 ,  H01L29/7378

摘要： The invention relates to a method for producing a bipolar transistor having low base terminal resistance, a low defect density, and improved scalability, scalability referring to both the lateral scaling of the emitter window and the vertical scaling of the base width (low temperature budget). The temperature budget can be maintained at a low level in the base area, as no implantations are required in order to reduce the base terminal resistance. Furthermore, the difficulties related to point defects are largely avoided.

公开(公告)号：EP1234329A1

公开(公告)日：2002-08-28

申请号：EP00985129.6

申请日：2000-12-01

申请人： Infineon Technologies AG

发明人： BOECK, Josef ,  KLEIN, Wolfgang ,  SCHAEFER, Herbert ,  FRANOSCH, Martin ,  STENGL, Reinhard ,  MEISTER, Thomas

IPC分类号： H01L21/331

CPC分类号： H01L29/66287 ,  H01L29/66242

摘要： The bipolar transistor is produced in such a way that a connecting region of its base (B) is fitted with a silicide layer (SD) so that a base resistor of the bipolar transistor is small. No silicide layer is produced between an emitter (E) and a contact (KE) of said emitter (E) and between a connecting region (A) of a collector (C) and a contact (K3) of said collector (C). The base (B) is produced by in-situ doped epitaxy in a region in which a first insulating layer (I1) is removed by isotropic etching so that the connecting region of the base (B) disposed on the first insulating layer (I1) is underetched. In order to prevent defects of a substrate (1) in which the bipolar transistor is partly produced, isotropic etching is used to structure auxiliary layers (H1, H3), whereby etching is performed selectively with respect to the auxiliary layers (H2, SP) disposed thereon, which are structured by anisotropic etching.