发明授权
- 专利标题： SiC SINGLE CRYSTAL AND METHOD FOR GROWING THE SAME
- 专利标题（中）： SiC单晶及其制造方法
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申请号： EP00956965.8申请日： 2000-09-06
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公开(公告)号： EP1243674B1公开(公告)日： 2005-06-08
- 发明人: SHIOMI, Hiromu , KIMOTO, Tsunenobu , MATSUNAMI, Hiroyuki
- 申请人： Sixon Inc. , Kansai Electric Power C.C., Inc. , MITSUBISHI CORPORATION , Sumitomo Electric Industries, Ltd.
- 申请人地址： 27-1 Hideri-cho, Saiin Ukyo-ku, Kyoto-shi Kyoto 615-0065 JP
- 专利权人： Sixon Inc.,Kansai Electric Power C.C., Inc.,MITSUBISHI CORPORATION,Sumitomo Electric Industries, Ltd.
- 当前专利权人： Sixon Inc.,Kansai Electric Power C.C., Inc.,MITSUBISHI CORPORATION,Sumitomo Electric Industries, Ltd.
- 当前专利权人地址： 27-1 Hideri-cho, Saiin Ukyo-ku, Kyoto-shi Kyoto 615-0065 JP
- 代理机构： HOFFMANN - EITLE
- 优先权： JP25157299 19990906
- 国际公布： WO2001018286 20010315
- 主分类号： C30B29/36
- IPC分类号： C30B29/36 ; C30B23/00 ; C30B23/02 ; C30B25/00 ; C30B25/02
摘要：
A method of growing a 4H-poly type SiC single crystal 40, characterized in that the 4H-poly type SiC single crystal 40 is grown on a seed crystal 30 comprised of an SiC single crystal where a ä03-38ü plane 30u or a plane which is inclined at off angle alpha , within about 10 DEG , with respect to the ä03-38ü plane, is exposed.
公开/授权文献
- EP1243674A1 SiC SINGLE CRYSTAL AND METHOD FOR GROWING THE SAME 公开/授权日：2002-09-25
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