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1.发明授权SiC WAFER, SiC SEMICONDUCTOR DEVICE AND PRODUCTION METHOD OF SiC WAFER 有权碳化硅半导体晶片的SiC半导体部件及其制造方法的碳化硅半导体晶片
公开(公告)号：EP1215730B1
公开(公告)日：2007-03-07
申请号：EP00956966.6
申请日：2000-09-06
申请人： Sixon Inc. , Kansai Electric Power C.C., Inc. , MITSUBISHI CORPORATION , Sumitomo Electric Industries, Ltd.
IPC分类号： H01L29/16 , H01L29/47 , H01L29/78 , C30B29/36 , C30B23/00 , C30B23/02 , C30B25/00 , C30B25/02 , C30B25/20
CPC分类号： H01L29/1608 , C30B23/00 , C30B23/02 , C30B29/36 , H01L21/02378 , H01L21/02447 , H01L21/02516 , H01L21/02529 , H01L21/02579 , H01L21/02587 , H01L21/0262 , H01L21/02658 , H01L29/045 , H01L29/78
摘要： A SiC wafer comprises a 4H polytype SiC substrate 2 in which the crystal plane orientation is substantially ä03-38ü, and a buffer layer 4 composed of SiC formed over this SiC substrate 2. The ä03-38ü plane forms an angle of approximately 35 DEG with respect to the axial direction in which micropipes and so forth extend, so micropipes and so forth are eliminated at the crystal sides, and do not go through to an active layer 6 on the buffer layer 4. Lattice mismatching between the SiC substrate 2 and the active layer 6 is suppressed by the buffer layer 4. Furthermore, anisotropy in the electron mobility is low because a 4H polytype is used. Therefore, it is possible to obtain a SiC wafer and a SiC semiconductor device with which there is little anisotropy in the electron mobility, and strain caused by lattice mismatching can be lessened, as well as a method for manufacturing these.
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2.发明授权
公开(公告)号：EP1215730B9
公开(公告)日：2007-08-01
申请号：EP00956966.6
申请日：2000-09-06
申请人： Sixon Inc. , Kansai Electric Power C.C., Inc. , MITSUBISHI CORPORATION , Sumitomo Electric Industries, Ltd.
IPC分类号： H01L29/16 , H01L29/47 , H01L29/78 , C30B29/36 , C30B23/00 , C30B23/02 , C30B25/00 , C30B25/02 , C30B25/20
CPC分类号： H01L29/1608 , C30B23/00 , C30B23/02 , C30B29/36 , H01L21/02378 , H01L21/02447 , H01L21/02516 , H01L21/02529 , H01L21/02579 , H01L21/02587 , H01L21/0262 , H01L21/02658 , H01L29/045 , H01L29/78
摘要： A SiC wafer comprises a 4H polytype SiC substrate 2 in which the crystal plane orientation is substantially ä03-38ü, and a buffer layer 4 composed of SiC formed over this SiC substrate 2. The ä03-38ü plane forms an angle of approximately 35 DEG with respect to the axial direction in which micropipes and so forth extend, so micropipes and so forth are eliminated at the crystal sides, and do not go through to an active layer 6 on the buffer layer 4. Lattice mismatching between the SiC substrate 2 and the active layer 6 is suppressed by the buffer layer 4. Furthermore, anisotropy in the electron mobility is low because a 4H polytype is used. Therefore, it is possible to obtain a SiC wafer and a SiC semiconductor device with which there is little anisotropy in the electron mobility, and strain caused by lattice mismatching can be lessened, as well as a method for manufacturing these.
摘要翻译： 一种SiC晶片，其包括面取向为约{03-38}的4H多晶SiC衬底（2）和形成在SiC衬底（2）上的SiC缓冲层（4）。 由于{03-38}面相对于微管等延伸的<0001×轴方向形成约35°的角度，所以微管等在晶体侧面消失， 不进入缓冲层（4）上的有源层（6）。 另外，SiC衬底（2）和有源层（6）之间的晶格失配受到缓冲层（4）的限制，并且使用4H多晶型降低了电子迁移率的各向异性，从而提供了减小的SiC晶片 在电子迁移率的各向异性中通过晶格失配而缓和应变，SiC半导体器件及其制造方法。
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3.发明公开SiC WAFER, SiC SEMICONDUCTOR DEVICE AND PRODUCTION METHOD OF SiC WAFER 有权SiC-HALBLEITERCHEIBE，SiC-HALBLEITERBAUELEMENT SOWIE HERSTELLUNGSVERFAHRENFÜREINE SiC-HALBLEITERCHEIBE
公开(公告)号：EP1215730A4
公开(公告)日：2003-02-05
申请号：EP00956966
申请日：2000-09-06
IPC分类号： C30B23/00 , C30B23/02 , H01L21/04 , H01L29/04 , H01L29/24 , H01L29/78 , H01L29/16 , C30B25/00 , C30B25/02 , C30B25/20 , C30B29/36 , H01L29/47
CPC分类号： H01L29/1608 , C30B23/00 , C30B23/02 , C30B29/36 , H01L21/02378 , H01L21/02447 , H01L21/02516 , H01L21/02529 , H01L21/02579 , H01L21/02587 , H01L21/0262 , H01L21/02658 , H01L29/045 , H01L29/78
摘要： A SiC wafer comprises a 4H polytype SiC substrate 2 in which the crystal plane orientation is substantially ä03-38ü, and a buffer layer 4 composed of SiC formed over this SiC substrate 2. The ä03-38ü plane forms an angle of approximately 35 DEG with respect to the axial direction in which micropipes and so forth extend, so micropipes and so forth are eliminated at the crystal sides, and do not go through to an active layer 6 on the buffer layer 4. Lattice mismatching between the SiC substrate 2 and the active layer 6 is suppressed by the buffer layer 4. Furthermore, anisotropy in the electron mobility is low because a 4H polytype is used. Therefore, it is possible to obtain a SiC wafer and a SiC semiconductor device with which there is little anisotropy in the electron mobility, and strain caused by lattice mismatching can be lessened, as well as a method for manufacturing these.
摘要翻译： SiC晶片包括4H多型SiC衬底2，其中晶面取向基本上为ä03-38ü，以及由该SiC衬底2上形成的由SiC构成的缓冲层4.ä03-38ü平面形成大约35°的角度， 相对于其中微孔等的<0001>轴向方向延伸，因此在晶体侧消除微管等，并且不会通过缓冲层4上的有源层6.晶片在SiC衬底之间不匹配 而且由于使用了4H多型，因此电子迁移率的各向异性低。 因此，可以获得在电子迁移率中几何异向性小的SiC晶片和SiC半导体器件，并且可以减小由晶格失配引起的应变以及其制造方法。
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4.发明公开SiC SINGLE CRYSTAL AND METHOD FOR GROWING THE SAME 有权SIC-EINKRISTALL UND HERSTELLUNGSVERFAHRENDAFÜR
公开(公告)号：EP1249521A1
公开(公告)日：2002-10-16
申请号：EP00956968.2
申请日：2000-09-06
申请人： Sixon Inc. , THE KANSAI ELECTRIC POWER CO., INC. , MITSUBISHI CORPORATION , Sumitomo Electric Industries, Ltd.
IPC分类号： C30B29/36 , H01L21/205
CPC分类号： C30B23/005 , C30B23/00 , C30B25/00 , C30B29/36
摘要： A method of growing an SiC single crystal, characterized in that an SiC single crystal 40 is grown on a seed crystal 30 comprised of an SiC single crystal in which a plane 30u, shifted with respect to the {0001} plane through an angle α (20° orientation, is within 15°, is exposed.
摘要翻译： 碳化硅单晶的生长包括在包含SiC单晶的晶种上生长SiC单晶，其角度α（α小于小于60度的20°）到{0001}表面，并且在 通过将法向量投影到{0001}表面和（11-20）方向上而获得的矢量的角度β= 15°。 对于通过该方法生长的碳化硅单晶，还包括独立权利要求。
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公开(公告)号：EP1233085B1
公开(公告)日：2005-12-07
申请号：EP00956967.4
申请日：2000-09-06
申请人： Sixon Inc. , THE KANSAI ELECTRIC POWER CO., INC. , MITSUBISHI CORPORATION , Sumitomo Electric Industries, Ltd.
CPC分类号： C30B23/00 , C30B23/02 , C30B23/025 , C30B29/36
摘要： Provided is a method for growing a 6H-poly-type SiC single crystal 40, in which method a 6H-poly-type SiC single crystal 40 is grown on a seed crystal 30 composed from an SiC single crystal in which a plane ä01-14ü 30u or a plane inclined by an off angle alpha equal to or less than approximately 10 DEG with respect to the plane ä01-14ü is exposed.
摘要翻译： 一种生长6H多型SiC单晶（40）的方法，其特征在于，6H多型SiC单晶（40）在包含暴露{01-14}晶面的SiC单晶的晶种（30）上生长， 平面（30u）或从{01-14}平面以小于约10°的偏角$ g（a）倾斜的平面。 用于生长SiC单晶的方法可以减少暴露在SiC单晶表面上的微管和堆垛层错，并且因此通过该方法制备的SiC单晶几乎没有暴露在其表面上的微管和堆垛层错。
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公开(公告)号：EP1249521A4
公开(公告)日：2003-02-05
申请号：EP00956968
申请日：2000-09-06
CPC分类号： C30B23/005 , C30B23/00 , C30B25/00 , C30B29/36
摘要： The growth of a silicon carbide single crystal comprises growing a SiC single crystal on a seed crystal comprising a SiC single crystal at an angle alpha (20 [deg] less than alpha less than 60 [deg]) to the {0001} surface and at an angle beta of = 15[deg] of the vector obtained by projecting the normal vector onto the {0001} surface and the (11-20) direction. An independent claim is also included for a silicon carbide single crystal grown by this method.
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7.发明公开SiC SINGLE CRYSTAL AND METHOD FOR GROWING THE SAME 有权SIC-EINKRISTALL UND HERSTELLUNGSVERFAHRENDAFÜR
公开(公告)号：EP1233085A4
公开(公告)日：2003-02-05
申请号：EP00956967
申请日：2000-09-06
CPC分类号： C30B23/00 , C30B23/02 , C30B23/025 , C30B29/36
摘要： Provided is a method for growing a 6H-poly-type SiC single crystal 40, in which method a 6H-poly-type SiC single crystal 40 is grown on a seed crystal 30 composed from an SiC single crystal in which a plane ä01-14ü 30u or a plane inclined by an off angle alpha equal to or less than approximately 10 DEG with respect to the plane ä01-14ü is exposed.
摘要翻译： 提供了一种用于生长6H-多晶型SiC单晶40的方法，其中在由SiC单晶组成的晶种30上生长6H-多晶型SiC单晶40，其中平面ä01-14ü 30u或相对于平面ä01-14ü等于或小于10°的偏角α倾斜的平面被暴露。
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公开(公告)号：EP1249521B8
公开(公告)日：2006-05-03
申请号：EP00956968.2
申请日：2000-09-06
申请人： Sixon Inc. , Kansai Electric Power C.C., Inc. , MITSUBISHI CORPORATION , Sumitomo Electric Industries, Ltd.
CPC分类号： C30B23/005 , C30B23/00 , C30B25/00 , C30B29/36
摘要： The growth of a silicon carbide single crystal comprises growing a SiC single crystal on a seed crystal comprising a SiC single crystal at an angle alpha (20 [deg] less than alpha less than 60 [deg]) to the {0001} surface and at an angle beta of = 15[deg] of the vector obtained by projecting the normal vector onto the {0001} surface and the (11-20) direction. An independent claim is also included for a silicon carbide single crystal grown by this method.
摘要翻译： 一种生长SiC的方法，其特征在于4H多晶型SiC单晶（40）在包含SiC单晶的晶种（30）上生长，所述SiC单晶露出从{0001}面倾斜的平面（30u） 通过将其法向矢量投影到{0001}平面上获得的矢量与小于15°的<11-20>方向之间具有角度（β）的角度（α）（20°<α<60°） 大约10°。 用于生长SiC单晶的方法可以减少暴露在SiC单晶表面上的微管和堆垛层错，并且因此通过该方法制备的SiC单晶几乎没有暴露在其表面上的微管和堆垛层错。
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公开(公告)号：EP1249521B1
公开(公告)日：2006-01-11
申请号：EP00956968.2
申请日：2000-09-06
申请人： Sixon Inc. , Kansai Electric Power C.C., Inc. , MITSUBISHI CORPORATION , Sumitomo Electric Industries, Ltd.
CPC分类号： C30B23/005 , C30B23/00 , C30B25/00 , C30B29/36
摘要： The growth of a silicon carbide single crystal comprises growing a SiC single crystal on a seed crystal comprising a SiC single crystal at an angle alpha (20 [deg] less than alpha less than 60 [deg]) to the {0001} surface and at an angle beta of = 15[deg] of the vector obtained by projecting the normal vector onto the {0001} surface and the (11-20) direction. An independent claim is also included for a silicon carbide single crystal grown by this method.
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公开(公告)号：EP1243674B1
公开(公告)日：2005-06-08
申请号：EP00956965.8
申请日：2000-09-06
申请人： Sixon Inc. , Kansai Electric Power C.C., Inc. , MITSUBISHI CORPORATION , Sumitomo Electric Industries, Ltd.
摘要： A method of growing a 4H-poly type SiC single crystal 40, characterized in that the 4H-poly type SiC single crystal 40 is grown on a seed crystal 30 comprised of an SiC single crystal where a ä03-38ü plane 30u or a plane which is inclined at off angle alpha , within about 10 DEG , with respect to the ä03-38ü plane, is exposed.
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