发明公开
EP1267395A2 Method for the formation of silica film, silica film, insulating film, and semiconductor device
审中-公开
一种用于生产二氧化硅层，二氧化硅层，绝缘层，半导体装置的过程
- 专利标题： Method for the formation of silica film, silica film, insulating film, and semiconductor device
- 专利标题（中）： 一种用于生产二氧化硅层，二氧化硅层，绝缘层，半导体装置的过程
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申请号： EP02012824.5申请日： 2002-06-10
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公开(公告)号： EP1267395A2公开(公告)日： 2002-12-18
- 发明人: Hayashi, Eiji , Shiota, Atsushi , Nishikawa, Michinori , Yamada, Kinji
- 申请人： JSR Corporation
- 申请人地址： 11-24, Tsukiji 2-chome, Chuo-ku Tokyo JP
- 专利权人： JSR Corporation
- 当前专利权人： JSR Corporation
- 当前专利权人地址： 11-24, Tsukiji 2-chome, Chuo-ku Tokyo JP
- 代理机构： Leson, Thomas Johannes Alois, Dipl.-Ing.
- 优先权： JP2001175600 20010611; JP2001175601 20010611
- 主分类号： H01L21/312
- IPC分类号： H01L21/312
摘要：
A method for the formation of a silica film which comprises treating a film in a supercritical medium, the film comprising (A) a siloxane compound and (B) at least one member selected from the group consisting of (B-1) a compound compatible with or dispersible in ingredient (A) and having a boiling or decomposition temperature of from 150 to 500°C and (B-2) a surfactant. The silica film has excellent mechanical strength showing a dielectric constant of generally 2.2 or lower, and hence is useful as a dielectric film in semiconductor devices and the like.
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