发明授权
- 专利标题： Verfahren zur Herstellung eines Bipolartransistors
- 专利标题（英）： Method for producing a bipolar transistor
- 专利标题（中）： 一种用于制造双极晶体管的过程
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申请号： EP01943320.0申请日： 2001-05-04
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公开(公告)号： EP1279191B1公开(公告)日： 2006-07-05
- 发明人: MÜLLER, Karl-Heinz , WOLF, Konrad
- 申请人： Infineon Technologies AG
- 申请人地址： St.-Martin-Strasse 53 81669 München DE
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： St.-Martin-Strasse 53 81669 München DE
- 代理机构： Ginzel, Christian
- 优先权： EP00109644 20000505
- 国际公布： WO2001086711 20011115
- 主分类号： H01L21/331
- IPC分类号： H01L21/331
摘要：
The invention relates to a method for producing bipolar transistors with the aid of selective epitaxy for producing a collector and base. The inventive method is advantageous in that the area of the base is widened by the isotropic etching of the conductive layer or by the oxidation of the conductive layer and by the subsequent removal of the oxide layer. This widening of the area of the base prevents the occurrence of short-circuits between the emitter and the collector during the subsequent production of the base.
公开/授权文献
- EP1279191A1 VERFAHREN ZUR HERSTELLUNG EINES BIPOLARTRANSISTORS 公开/授权日：2003-01-29
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