公开(公告)号：EP1279191B1

公开(公告)日：2006-07-05

申请号：EP01943320.0

申请日：2001-05-04

申请人： Infineon Technologies AG

发明人： MÜLLER, Karl-Heinz ,  WOLF, Konrad

IPC分类号： H01L21/331

CPC分类号： H01L29/66287

摘要： The invention relates to a method for producing bipolar transistors with the aid of selective epitaxy for producing a collector and base. The inventive method is advantageous in that the area of the base is widened by the isotropic etching of the conductive layer or by the oxidation of the conductive layer and by the subsequent removal of the oxide layer. This widening of the area of the base prevents the occurrence of short-circuits between the emitter and the collector during the subsequent production of the base.

公开(公告)号：EP1279191A1

公开(公告)日：2003-01-29

申请号：EP01943320.0

申请日：2001-05-04

申请人： Infineon Technologies AG

发明人： MÜLLER, Karl-Heinz ,  WOLF, Konrad

IPC分类号： H01L21/331

CPC分类号： H01L29/66287

摘要： The invention relates to a method for producing bipolar transistors with the aid of selective epitaxy for producing a collector and base. The inventive method is advantageous in that the area of the base is widened by the isotropic etching of the conductive layer or by the oxidation of the conductive layer and by the subsequent removal of the oxide layer. This widening of the area of the base prevents the occurrence of short-circuits between the emitter and the collector during the subsequent production of the base.

公开(公告)号：EP1192652A1

公开(公告)日：2002-04-03

申请号：EP00943661.9

申请日：2000-05-30

申请人： Infineon Technologies AG

发明人： WAWER, Peter ,  SPRINGMANN, Oliver ,  WOLF, Konrad ,  HEITZSCH, Olaf ,  HUCKELS, Kai ,  RENNEKAMP, Reinhold ,  RÖHRICH, Mayk ,  STEIN VON KAMIENSKI, Elard ,  KUTTER, Christoph ,  LUDWIG, Christoph

IPC分类号： H01L21/336 ,  H01L29/788

CPC分类号： H01L29/66825 ,  H01L29/7883

摘要： The invention relates to method of producing a non-volatile semiconductor memory cell (SZ) with a separate tunnel window cell (TF). A tunnel section (TG) is formed in a late implantation step by tunnel implantation (IT) using the tunnel window cell (TF) as a matrix. The inventive method provides a memory cell that requires a minimum of space and allows for a high quantity of program/erase cycles.

公开(公告)号：EP1295326A1

公开(公告)日：2003-03-26

申请号：EP01949264.4

申请日：2001-06-15

申请人： Infineon Technologies AG

发明人： FRANOSCH, Martin ,  MEISTER, Thomas ,  SCHÄFER, Herbert ,  STENGL, Reinhard ,  WOLF, Konrad

IPC分类号： H01L21/331 ,  H01L29/737 ,  H01L29/732

CPC分类号： H01L29/1004

摘要： The silicon bipolar transistor (100) comprises a base, with a first highly-doped base layer (105) and a second poorly-doped base layer (106) which together form the base. The emitter is completely highly-doped and mounted directly on the second base layer (106).