发明公开
EP1296365A2 Method of film formation, insulating film, and substrate for semiconductor
有权
Filmherstellungsmethode
- 专利标题： Method of film formation, insulating film, and substrate for semiconductor
- 专利标题（中）： Filmherstellungsmethode
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申请号： EP02021167.8申请日： 2002-09-24
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公开(公告)号： EP1296365A2公开(公告)日： 2003-03-26
- 发明人: Nishikawa, Michinori , Sekiguchi, Manabu , Patz, Matthias , Yoshioka, Mutsuhiko , Shiota, Atsushi , Yamada, Kinji
- 申请人： JSR Corporation
- 申请人地址： 11-24, Tsukiji 2-chome, Chuo-ku Tokyo JP
- 专利权人： JSR Corporation
- 当前专利权人： JSR Corporation
- 当前专利权人地址： 11-24, Tsukiji 2-chome, Chuo-ku Tokyo JP
- 代理机构： Leson, Thomas Johannes Alois, Dipl.-Ing.
- 优先权： JP2001291539 20010925; JP2001307909 20011003
- 主分类号： H01L21/312
- IPC分类号： H01L21/312
摘要：
An insulating film for semiconductors which has excellent adhesion to films formed by CVD and is useful as a dielectric film in semiconductor devices and the like is provided. The insulating film is obtained by a method comprising:
(A) a step of subjecting a substrate to at least either of (A-1) at least one treatment selected from the group consisting of an ultraviolet irradiation treatment, an oxygen plasma treatment, a nitrogen plasma treatment, a helium plasma treatment, an argon plasma treatment, a hydrogen plasma treatment and an ammonia plasma treatment, and (A-2) a treatment with at least one of alkoxysilane compound having a reactive group and a product of the hydrolysis and condensation thereof; and
(B) a step of applying a composition for film formation which comprises an organic solvent and either or both of at least one compound selected from the group consisting of compounds represented by the general formulae (1) to (4) as described hereinabove, and a hydrolysis/condensation product obtained by hydrolyzing and condensing the at least one compound, to the substrate and heating the resulting coating.
(A) a step of subjecting a substrate to at least either of (A-1) at least one treatment selected from the group consisting of an ultraviolet irradiation treatment, an oxygen plasma treatment, a nitrogen plasma treatment, a helium plasma treatment, an argon plasma treatment, a hydrogen plasma treatment and an ammonia plasma treatment, and (A-2) a treatment with at least one of alkoxysilane compound having a reactive group and a product of the hydrolysis and condensation thereof; and
(B) a step of applying a composition for film formation which comprises an organic solvent and either or both of at least one compound selected from the group consisting of compounds represented by the general formulae (1) to (4) as described hereinabove, and a hydrolysis/condensation product obtained by hydrolyzing and condensing the at least one compound, to the substrate and heating the resulting coating.
公开/授权文献
- EP1296365B1 Method of film formation 公开/授权日：2010-09-22
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