发明公开
EP1303882A1 TRANSISTOR GATE INSULATOR LAYER INCORPORATING SUPERFINE CERAMIC PARTICLES
审中-公开
与SUPER陶瓷微粒晶体管栅极绝缘层
- 专利标题： TRANSISTOR GATE INSULATOR LAYER INCORPORATING SUPERFINE CERAMIC PARTICLES
- 专利标题（中）： 与SUPER陶瓷微粒晶体管栅极绝缘层
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申请号： EP01908662.8申请日： 2001-01-22
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公开(公告)号： EP1303882A1公开(公告)日： 2003-04-23
- 发明人: LEE, Tzu-Chen , O'BRYAN, Nelson, B.
- 申请人： 3M Innovative Properties Company
- 申请人地址： 3M Center,P.O. Box 33427 Saint Paul, MN 55133-3427 US
- 专利权人： 3M Innovative Properties Company
- 当前专利权人： 3M Innovative Properties Company
- 当前专利权人地址： 3M Center,P.O. Box 33427 Saint Paul, MN 55133-3427 US
- 代理机构： VOSSIUS & PARTNER
- 优先权： US619302 20000719
- 国际公布： WO02009190 20020131
- 主分类号： H01L29/768
- IPC分类号： H01L29/768
摘要：
An insulating layer in a field effect transistor is formed of superfine ceramic particles dispersed in a polymeric matrix. The characteristics of the insulating layer can be changed by varying the mix of ceramic particles and matrix components. Appropriate selection of components can provide a high dielectric constant material which is not subject to pinholes, has a high voltage breakdown and is chemically resistant. The material can be applied at relatively low processing temperatures, using a wide range of coating techniques, and is highly suited for use with polymeric substrates.
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