发明公开
EP1313138A2 Protective layer in memory device and method therefore
审中-公开
Schutzschicht在Speicheranordnung und dessen Verfahren
- 专利标题： Protective layer in memory device and method therefore
- 专利标题（中）： Schutzschicht在Speicheranordnung und dessen Verfahren
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申请号： EP02257954.4申请日： 2002-11-19
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公开(公告)号： EP1313138A2公开(公告)日： 2003-05-21
- 发明人: Eitan, Boaz , Bloom, Ilan
- 申请人： Saifun Semiconductors Ltd.
- 申请人地址： Elrod Building, 45 Hamelacha Street, Sapir Industrial Area Netanya 42505 IL
- 专利权人： Saifun Semiconductors Ltd.
- 当前专利权人： Saifun Semiconductors Ltd.
- 当前专利权人地址： Elrod Building, 45 Hamelacha Street, Sapir Industrial Area Netanya 42505 IL
- 代理机构： Mounteney, Simon James
- 优先权： US988122 20011119
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/8246
摘要：
A method for protecting a non-volatile memory device, the method including forming a non-volatile memory device including a polycide structure formed over a non-conducting charge trapping layer, and forming a protective layer over at least a portion of the polycide structure, the protective layer being adapted to absorb electromagnetic wave energy having a wavelength shorter than visible light. A device constructed in accordance with the method is also disclosed.
公开/授权文献
- EP1313138A3 Protective layer in memory device and method therefore 公开/授权日：2007-12-05
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