发明公开
- 专利标题: IMPROVED TRANSPARENT SUBSTRATE LIGHT EMITTING DIODE
- 专利标题(中): 具有改进的透明衬底发光二极管
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申请号: EP01954939.3申请日: 2001-07-25
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公开(公告)号: EP1323215A1公开(公告)日: 2003-07-02
- 发明人: CHEN, John , LIANG, Bingwen , SHIH, Robert
- 申请人: American Xtal Technology, Inc.
- 申请人地址: 4281 Technology Drive Fremont, CA 94568 US
- 专利权人: American Xtal Technology, Inc.
- 当前专利权人: American Xtal Technology, Inc.
- 当前专利权人地址: 4281 Technology Drive Fremont, CA 94568 US
- 代理机构: Feray, Valérie
- 优先权: US626444 20000726
- 国际公布: WO02009243 20020131
- 主分类号: H01S3/08
- IPC分类号: H01S3/08 ; H01S5/00
摘要:
A gallium nitride based light emitting diode comprises both a transparent substrate (101) and a window (109) for exiting light generated by the LED. Useful amounts of light may be utilized at the face of the window (109) or at the face of the transparent substrate (101). An external optical reflector (112) is formed directly on the external face of the LED which is not currently being used to exit useful light. If light from the window (109) is being utilized, a Distributed Bragg Reflector, or DBR, (112) is formed directly on the 'backside' of the substrate. However, if light through the substrate (101) is being utilized, a DBR (112) is formed directly on the light emitting portion of the window (109).
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