公开(公告)号：EP1320900A2

公开(公告)日：2003-06-25

申请号：EP01955967.3

申请日：2001-07-25

申请人： American Xtal Technology, Inc.

发明人： CHEN, John ,  LIANG, Bingwen ,  SHIH, Robert

IPC分类号： H01L33/00

CPC分类号： H01L33/14 ,  H01L33/30 ,  H01L33/38

摘要： A GaN based LED comprises: a three layer buffer (11) which is a template for growth of a high quality I GaN platform for quality growth of subsequent layers; a light emitting structure (12); and complementary N and P electrode structures (115, 113) which spread current flowing between the electrodes fully across the light emitting structure (12).

公开(公告)号：EP1320894A1

公开(公告)日：2003-06-25

申请号：EP01954938.5

申请日：2001-07-25

申请人： American Xtal Technology, Inc.

发明人： CHEN, John ,  LIANG, Bingwen ,  SHIH, Robert

IPC分类号： H01L27/15

CPC分类号： H01L33/42 ,  H01L33/02 ,  H01L33/14 ,  H01L33/32

摘要： A window structure for Gallium Nitride based Light Emitting Diode comprises: an Mg+ doped P window layer (109) of GaN compound; a thin semi-transparent metal contact layer (110); an amorphous current spreading layer (111) formed on the contact layer. The contact layer is formed of NiOx/Au; and the current spreading layer is formed of Indium Tin Oxide. The P electrode (112) of the diode comprises a titanium adhesion layer which forms an ohmic connection with the current spreading layer and a Shottky diode connection with the Mg+ doped window layer.

公开(公告)号：EP1320899A1

公开(公告)日：2003-06-25

申请号：EP01954944.3

申请日：2001-07-25

申请人： American Xtal Technology, Inc.

发明人： CHEN, John ,  LIANG, Bingwen ,  SHIH, Robert

IPC分类号： H01L33/00 ,  H01L27/15 ,  H01L29/12 ,  H01L29/20 ,  H01L31/109

CPC分类号： H01L33/38 ,  H01L33/10 ,  H01L33/14 ,  H01L33/16 ,  H01L33/30

摘要： A Light Emitting Diode (LED) constructed of AlGaInP compounds includes a multi layer window which improves the efficiency of the diode. The window, in the order of formation, includes a lightly doped first layer (207) formed of p doped GaP; a low impedance second layer (208) formed of p GaAs; an amorphous conducting layer (209) formed of Indium Tin Oxide (ITO), and a titanium/gold contact (210). In one embodiment, the contact forms ohmic connections with the second and third layers; and a Shottky diode connection with first layer. In a second embodiment, the contact forms an ohmic connection with the third layer, and is insulated from direct contact with the first layer.

公开(公告)号：EP1323215A1

公开(公告)日：2003-07-02

申请号：EP01954939.3

申请日：2001-07-25

申请人： American Xtal Technology, Inc.

发明人： CHEN, John ,  LIANG, Bingwen ,  SHIH, Robert

IPC分类号： H01S3/08 ,  H01S5/00

CPC分类号： H01L33/46

摘要： A gallium nitride based light emitting diode comprises both a transparent substrate (101) and a window (109) for exiting light generated by the LED. Useful amounts of light may be utilized at the face of the window (109) or at the face of the transparent substrate (101). An external optical reflector (112) is formed directly on the external face of the LED which is not currently being used to exit useful light. If light from the window (109) is being utilized, a Distributed Bragg Reflector, or DBR, (112) is formed directly on the 'backside' of the substrate. However, if light through the substrate (101) is being utilized, a DBR (112) is formed directly on the light emitting portion of the window (109).

公开(公告)号：EP1320901A1

公开(公告)日：2003-06-25

申请号：EP01961721.6

申请日：2001-07-25

申请人： American Xtal Technology, Inc.

发明人： CHEN, Changhua ,  DONG, James ,  LIU, Heng ,  Cheng, Xiuping

IPC分类号： H01L33/00

CPC分类号： H01L21/0254 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L33/007

摘要： A GaN based three layer buffer (11) on a sapphire substrate (101) provides a template for growth of a high quality I GaN layer (105) as a substrate for growth of a Nitride based LED.