发明公开
EP1353337A2 Semiconductor memory 审中-公开
半导体内存

  • 专利标题: Semiconductor memory
  • 专利标题(中): 半导体内存
  • 申请号: EP03251744.3
    申请日: 2003-03-20
  • 公开(公告)号: EP1353337A2
    公开(公告)日: 2003-10-15
  • 发明人: Aikawa, Tadao, c/o Fujitsu Limited
  • 申请人: FUJITSU LIMITED
  • 申请人地址: 1-1, Kamikodanaka 4-chome, Nakahara-ku Kawasaki-shi, Kanagawa 211-8588 JP
  • 专利权人: FUJITSU LIMITED
  • 当前专利权人: FUJITSU LIMITED
  • 当前专利权人地址: 1-1, Kamikodanaka 4-chome, Nakahara-ku Kawasaki-shi, Kanagawa 211-8588 JP
  • 代理机构: Stebbing, Timothy Charles
  • 优先权: JP2002105898 20020409
  • 主分类号: G11C15/00
  • IPC分类号: G11C15/00
Semiconductor memory
摘要:
A content addressable memory (CAM) having reduced power consumption. A storage circuit (23) stores a plurality of patterns of information indicative of which memory word blocks 20-1 to 20-m to activate. If specification information for specifying a predetermined pattern from among the plurality of patterns of information which are stored in the storage circuit (23) is input, an activation circuit (21) activates each content addressable memory word block (20-1 to 20-m) according to a specified pattern. If data to be retrieved is input, a specification circuit (22) specifies a content addressable memory word (20-1-) which has stored data corresponding to the data to be retrieved from among a group (block or blocks) of content addressable memory words (20-1-1 to 20-1-N) activated by the activation circuit (21). As a result, activation will be performed by the content addressable memory word block (20-1). Therefore, by activating only necessary content addressable memory words (20-1-), consumption of power can be reduced.
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