Semiconductor memory
    1.
    发明公开
    Semiconductor memory 审中-公开
    半导体内存

    公开(公告)号:EP1353337A2

    公开(公告)日:2003-10-15

    申请号:EP03251744.3

    申请日:2003-03-20

    申请人: FUJITSU LIMITED

    IPC分类号: G11C15/00

    CPC分类号: G11C15/00

    摘要: A content addressable memory (CAM) having reduced power consumption. A storage circuit (23) stores a plurality of patterns of information indicative of which memory word blocks 20-1 to 20-m to activate. If specification information for specifying a predetermined pattern from among the plurality of patterns of information which are stored in the storage circuit (23) is input, an activation circuit (21) activates each content addressable memory word block (20-1 to 20-m) according to a specified pattern. If data to be retrieved is input, a specification circuit (22) specifies a content addressable memory word (20-1-) which has stored data corresponding to the data to be retrieved from among a group (block or blocks) of content addressable memory words (20-1-1 to 20-1-N) activated by the activation circuit (21). As a result, activation will be performed by the content addressable memory word block (20-1). Therefore, by activating only necessary content addressable memory words (20-1-), consumption of power can be reduced.

    摘要翻译: 内容可寻址存储器(CAM)具有降低的功耗。 存储电路(23)存储多个表示要激活哪个存储器字块20-1至20-m的信息模式。 如果输入了存储在存储电路(23)中的用于指定预定模式的指定信息,则激活电路(21)激活每个内容可寻址存储器字块(20-1至20-m )根据指定的模式。 如果要输入的数据被输入,则规定电路(22)指定一个内容可寻址存储字(20-1-),该内容可寻址存储字已经存储了与内容可寻址存储器的一个或多个组(块)中要检索的数据对应的数据 由激活电路(21)激活的字(20-1-1至20-1-N)。 结果,激活将由内容可寻址存储器字块(20-1)执行。 因此,通过仅激活必要的内容可寻址存储器字(20-1-),可以减少功耗。

    Associative memory with matching circuit with differential amplification
    2.
    发明公开
    Associative memory with matching circuit with differential amplification 审中-公开
    互联网信息平台

    公开(公告)号:EP1296334A2

    公开(公告)日:2003-03-26

    申请号:EP02250682.8

    申请日:2002-01-31

    申请人: FUJITSU LIMITED

    IPC分类号: G11C15/00 G11C15/04

    CPC分类号: G11C15/04 G11C5/147

    摘要: This associative memory circuit comprises a plurality of logic circuits connected to a common match line (12). Each of the logic circuits (Q1-Q4) compares a content stored in each of a plurality of memory cells (10 1 , 10 2 , ...) with externally supplied search data so as to output a comparison result thereof to the match line (12). The associative memory circuit also comprises a reference-potential producing circuit (22) provided correspondingly for the match line (12) so as to produce a reference potential used in relation with the match line (12), and a differential amplifier circuit (20) performing a differential amplification to a potential of the match line (12) and the reference potential so as to judge whether or not the content matches the search data.

    摘要翻译: 该关联存储器电路包括连接到公共匹配线(12)的多个逻辑电路。 每个逻辑电路(Q1-Q4)将存储在多个存储单元(101,102,...)中的每一个的内容与外部提供的搜索数据进行比较,以便将其比较结果输出到匹配线(12 )。 关联存储器电路还包括相应于匹配线(12)设置的参考电位产生电路(22),以产生与匹配线(12)相关的参考电位,以及差分放大电路(20) 对所述匹配线(12)的电位和所述参考电位进行差分放大,以便判断所述内容是否匹配所述搜索数据。