发明授权
EP1374291B1 DEPOSITION METHOD OVER MIXED SUBSTRATES USING TRISILANE
有权
ABSCHEIDUNGSVERFAHREN AUF MISCHSUBSTRATEN MITTELS TRISILAN
- 专利标题： DEPOSITION METHOD OVER MIXED SUBSTRATES USING TRISILANE
- 专利标题（中）： ABSCHEIDUNGSVERFAHREN AUF MISCHSUBSTRATEN MITTELS TRISILAN
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申请号： EP02721028.5申请日： 2002-02-12
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公开(公告)号： EP1374291B1公开(公告)日： 2007-11-21
- 发明人: TODD, Michael, A.
- 申请人： ASM America, Inc.
- 申请人地址： 3440 East University Drive Phoenix, AZ 85034-7200 US
- 专利权人： ASM America, Inc.
- 当前专利权人： ASM America, Inc.
- 当前专利权人地址： 3440 East University Drive Phoenix, AZ 85034-7200 US
- 代理机构： Polypatent
- 优先权： US268337P 20010212; US279256P 20010327; US311609P 20010809; US323649P 20010919; US332696P 20011113; US333724P 20011128; US340454P 20011207
- 国际公布： WO2002065517 20020822
- 主分类号： H01L21/205
- IPC分类号： H01L21/205
摘要：
Trisilane is used in chemical vapor deposition methods to deposit silicon-containing films over mixed substrates. Such methods are useful in semiconductor manufacturing to provide a variety of advantages, including uniform deposition over heterogeneous surfaces, high deposition rates, and higher manufacturing productivity. An example is in forming the base region of a heterojunction bipolar transistor, including simultaneous deposition over both single crystal semiconductor surfaces and amorphous insulating regions.
公开/授权文献
- EP1374291A2 DEPOSITION METHOD OVER MIXED SUBSTRATES USING TRISILANE 公开/授权日：2004-01-02
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