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发明公开
EP1376698A1 Electrically erasable and programable non-volatile memory cell 审中-公开
Elektrischlösch-und programmierbare nichtflüchtigeSpeicherzelle

Electrically erasable and programable non-volatile memory cell
摘要：
An electrically erasable and programmable non-volatile memory cell (205) integrated in a chip of semiconductor material (300) is proposed. The memory cell includes a floating gate MOS transistor (210m) having a source region (335) and a drain region (325) formed in a first well (315), a channel (340) being defined between the drain region and the source region during operation of the memory cell, a control gate region (350), and a floating gate (355) extending over the channel and the control gate region, and a bipolar transistor (215) for injecting an electric charge into the floating gate, the bipolar transistor having an emitter region (365) formed in the first well, a base region consisting of the first well, and a collector region consisting of the channel, wherein the memory cell further includes a second well (320) insulated from the first well, the control gate region being formed in the second well.
摘要（中）：

提出了集成在半导体材料（300）的芯片中的电可擦除和可编程的非易失性存储单元（205）。 存储单元包括具有形成在第一阱（315）中的源极区（335）和漏极区（325）的浮置栅极MOS晶体管（210m），在漏极区域和源极区域之间限定沟道（340） 在所述存储单元的操作期间，在所述通道和所述控制栅极区域上延伸的控制栅极区域（350）和浮置栅极（355）以及用于将电荷注入所述浮动栅极的双极晶体管（215） 双极晶体管，其具有形成在第一阱中的发射极区域（365），由第一阱构成的基极区域和由沟道组成的集电极区域，其中存储单元还包括与第一阱绝缘的第二阱（320） ，所述控制栅极区域形成在所述第二阱中。

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