发明授权
- 专利标题: PENNING DISCHARGE PLASMA SOURCE
- 专利标题(中): PENNINGENTLADUNGSPLASMAQUELLE
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申请号: EP02764187.7申请日: 2002-04-10
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公开(公告)号: EP1390558B1公开(公告)日: 2011-01-19
- 发明人: MADOCKS, John, E.
- 申请人: General Plasma, Inc.
- 申请人地址: 546 East 25th Street Tucson, AZ 85713 US
- 专利权人: General Plasma, Inc.
- 当前专利权人: General Plasma, Inc.
- 当前专利权人地址: 546 East 25th Street Tucson, AZ 85713 US
- 代理机构: Jungen, Rolf
- 优先权: US285360P 20010420; US285361P 20010420; US285364P 20010420
- 国际公布: WO2002086185 20021031
- 主分类号: H01J27/00
- IPC分类号: H01J27/00 ; H01J37/32 ; H01J49/42 ; C23C16/50 ; C23C16/505 ; C23C16/54
摘要:
The preferred embodiments described herein provide a Penning discharge plasma source. The magnetic and electric field arrangement, similar to a Penning discharge, effectively traps the electron Hall current in a region between two surfaces. When a substrate (10) is positioned proximal to at least one of the electrodes (11, 12) and is moved relative to the plasma, the substrate (10) is plasma treated, coated or otherwise modified depending upon the process gas used and the process pressure. This confinement arrangement produces dramatic results not resembling known prior art. Using this new source, many applications for PECVD, plasma etching, plasma treating, sputtering or other plasma processes will be substantial improved or made possible. In particular, applications using flexible webs (10) are benefited.
公开/授权文献
- EP1390558A1 PENNING DISCHARGE PLASMA SOURCE 公开/授权日:2004-02-25
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