a schottky rectifier is provided. The Schottky rectifier comprises: (A) a semiconductor region having first and second opposing faces, with the semiconductor region comprising a cathode region (12C) of first conductivity type adjacent the first face (12A) and a drift region(12D) of the first conductivity type adjacent the second face, and with the drift region having a lower net doping concentration than that of the cathode region; (B) one or more trenches extending from the second face (12B) into the semiconductor region and defining one or more mesas (14) within the semiconductor region; (C) an insulating region (16) adjacent the semiconductor region in lower portions of the trench; (D) and an anode electrode (18) that is (I) adjacent to and forms a schottky rectifying contact with the semiconductor at the second face (12), (II) adjacent to and forms a schottky rectifying contact with the semiconductor region within upper portions of the trench and (III) adjacent to the insulating region (16) within the lower portions of the trench.