发明公开
EP1408550A1 Array of cells including a selection bipolar transistor and fabrication method thereof
有权
Zellenanordnung mit Bipolar-Auswahl-Transistor和Herstellungsverfahren
- 专利标题： Array of cells including a selection bipolar transistor and fabrication method thereof
- 专利标题（中）： Zellenanordnung mit Bipolar-Auswahl-Transistor和Herstellungsverfahren
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申请号： EP02425605.9申请日： 2002-10-08
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公开(公告)号： EP1408550A1公开(公告)日： 2004-04-14
- 发明人: Pellizzer, Fabio , Casagrande, Giulio , Bez, Roberto
- 申请人： STMicroelectronics S.r.l. , OVONYX Inc.
- 申请人地址： Via C. Olivetti, 2 20041 Agrate Brianza (Milano) IT
- 专利权人： STMicroelectronics S.r.l.,OVONYX Inc.
- 当前专利权人： STMicroelectronics S.r.l.,OVONYX Inc.
- 当前专利权人地址： Via C. Olivetti, 2 20041 Agrate Brianza (Milano) IT
- 代理机构： Cerbaro, Elena
- 主分类号： H01L27/10
- IPC分类号： H01L27/10 ; H01L29/68 ; H01L45/00
摘要：
A cell array (1) is formed by a plurality of cells (2) including each a selection bipolar transistor (4) and a storage component (3). The cell array is formed in a body (10) including a common collector region (11) of P type; a plurality of base regions (12) of N type, overlying the common collector region (11); a plurality of emitter regions (14) of P type formed in the base regions; and a plurality of base contact regions (15) of N type and a higher doping level than the base regions, formed in the base regions (12; 42), wherein each base region (12) is shared by at least two adjacent bipolar transistors (20).
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