发明公开
EP1434253A4 SEMICONDUCTOR DEVICE FABRICATED ON SURFACE OF SILICON HAVING <110> DIRECTION OF CRYSTAL PLANE AND ITS PRODUCTION METHOD
有权
半导体部件，MADE与110晶体层方向及其制造方法在硅的表面
- 专利标题： SEMICONDUCTOR DEVICE FABRICATED ON SURFACE OF SILICON HAVING <110> DIRECTION OF CRYSTAL PLANE AND ITS PRODUCTION METHOD
- 专利标题（中）： 半导体部件，MADE与110晶体层方向及其制造方法在硅的表面
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申请号： EP02800747申请日： 2002-10-02
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公开(公告)号： EP1434253A4公开(公告)日： 2006-10-04
- 发明人: OHMI TADAHIRO , SHIGETOSHI SUGAWA
- 申请人： OHMI TADAHIRO , TOKYO ELECTRON LTD
- 专利权人： OHMI TADAHIRO,TOKYO ELECTRON LTD
- 当前专利权人： OHMI TADAHIRO,TOKYO ELECTRON LTD
- 优先权： JP2001307899 2001-10-03
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/316 ; H01L21/336 ; H01L29/04 ; H01L29/51 ; H01L29/78 ; H01L29/786 ; H01L21/00
摘要：
A semiconductor device in which field-effect transistors are fabricated on the surface of silicon substantially having direction of crystal plane. The field-effect transistors are so arranged on the silicon surface that the direction from the source region of each field-effect transistor to the drain region thereof substantially agrees with the direction of crystal plane.
信息查询
IPC分类:
