公开(公告)号：EP1398826A4

公开(公告)日：2006-09-06

申请号：EP02738770

申请日：2002-06-19

申请人： OHMI TADAHIRO ,  TOKYO ELECTRON LTD

发明人： OHMI TADAHIRO ,  HIRAYAMA MASAKI ,  GOTO TETSUYA

IPC分类号： H01L21/31 ,  C23C16/511 ,  H01J37/32 ,  H01L21/3065 ,  H05H1/46

CPC分类号： H01J37/3222 ,  H01J37/32192

摘要： Installed in a processing vessel (22) is a mounting block (24) on which a semiconductor wafer (W) is mounted. Microwaves, which are generated by a microwave generator (76), are introduced into a processing vessel (22) through a planar antenna member (66). The planar antenna member (66) has a plurality of slits (84) arranged along a plurality of circumferences, the circumferences forming non-concentric circles. The plasma density distribution in the radial direction of the planar antenna member (66) becomes uniform.

公开(公告)号：EP1001326A4

公开(公告)日：2004-11-17

申请号：EP99922553

申请日：1999-05-27

申请人： FUJIKIN KK ,  TOKYO ELECTRON LTD ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  KAGATSUME SATOSHI ,  IKEDA NOBUKAZU ,  NISHINO KOUJI ,  YOSHIKAWA KAZUHIRO ,  IDETA EIJI ,  DOHI RYOUSUKE ,  UNO TOMIO ,  YAMAJI MICHIO

IPC分类号： F17D1/00 ,  G05D7/06 ,  G05D16/20

CPC分类号： G05D7/0635 ,  Y10T137/7759 ,  Y10T137/7761

摘要： A gas supply equipment comprising a gas control valve (2), an orifice accommodating valve (9) provided downstream of the control valve (2), a pressure detector (3) provided between the control valve (2) and the orifice accommodating valve (9), an orifice (5) provided downstream of the valve mechanism of the orifice accommodating (9) and an arithmetic and control unit which calculates a flow rate as Qc = KP1 (K; constant) from a detected pressure P1 by the pressure detector (3) and outputs to the drive unit of the control valve (2) the difference between a flow rate instruction signal Qs and a calculated flow rate Qc as a control signal Qy.

公开(公告)号：EP0931941A4

公开(公告)日：2003-05-21

申请号：EP98937820

申请日：1998-08-13

申请人： FUJIKIN KK ,  TOKYO ELECTRON LTD ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  KAGAZUME TETU ,  SUGIYAMA KAZUHIKO ,  FUKADA OSAMU ,  OZAWA SUSUMU ,  SATOU YOSHIHIRO ,  DOHI RYOUSUKE ,  UNO TOMIO ,  NISHINO KOUJI ,  FUKUDA HIROYUKI ,  IKEDA NOBUKAZU ,  YAMAJI MICHIO

IPC分类号： G01F1/40 ,  G05D7/01 ,  F15D1/08 ,  B23P15/16 ,  G01F1/42

CPC分类号： G01F1/40 ,  G05D7/0186

摘要： An orifice for use in pressure type flow rate control unit which can be manufactured easily and inexpensively, and which has a linear relationship between pressure P1 upstream of the orifice and the flow rate over a wide range of pressure ratio P2/P1 (where P1 is the pressure upstream of the orifice and P2 is the pressure downstream of same), with the flow rate characteristic relationship among a plurality of orifices being easily adjustable. More specifically, the orifice has a structure comprising a tapered inlet section (1) wherein one open end of a bottom hole (6) bored into a main body member (D) is cut into a shape like the mouthpiece of a trumpet, and a short drawn parallel part (2) continuing therefrom; and a short expanded tapered section (3) formed by expanding the diameter of the other open end of the bottom hole (6) and continuing from the drawn parallel part (2), and an expanded parallel part (4) continuing therefrom.

公开(公告)号：EP1035457A4

公开(公告)日：2001-10-17

申请号：EP99935120

申请日：1999-08-09

申请人： FUJIKIN KK ,  TOKYO ELECTRON LTD ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  IIDA SEIICHI ,  KAGATSUME SATOSHI ,  HIROSE JUN ,  NISHINO KOUJI ,  IKEDA NOBUKAZU ,  YAMAJI MICHIO ,  DOHI RYOUSUKE ,  YOSHIKAWA KAZUHIRO ,  KOYOMOGI MUTSUNORI ,  UNO TOMIO ,  IDETA EIJI ,  HIROSE TAKASHI

IPC分类号： G05D7/06 ,  F16K37/00

CPC分类号： G05D7/0635 ,  Y10T137/0396 ,  Y10T137/7759 ,  Y10T137/7761 ,  Y10T137/8326

摘要： An orifice plugging sensor for a flow-rate controller having an orifice, comprising a memory (M) in which is stored reference pressure decrease data Y(t) about the upstream-side pressure P1 measured when the flow rate is changed from a high preset flow rate QSH to a low preset flow rate QSL under the condition that an orifice (2) does not plug, a pressure sensor (14) for measuring pressure decrease data P(t) about the upstream-side pressure P1 measured when the flow rate is changed from the high preset flow rate QSH to the low preset flow rate QSL under the condition that the orifice is in an actual state, a central processing unit (CPU) for comparison operation of the pressure decrease data P(t) and the reference pressure decrease data Y(t), and an alarm circuit (46) for giving an alarm of a plugging when the pressure decrease data P(t) differs from the reference pressure decrease data by a predetermined degree.

公开(公告)号：EP1300875A4

公开(公告)日：2006-12-20

申请号：EP02707228

申请日：2002-03-28

申请人： OHMI TADAHIRO ,  TOKYO ELECTRON LTD

发明人： OHMI TADAHIRO ,  HIRAYAMA MASAKI ,  SUGAWA SHIGETOSHI ,  GOTO T ,  HONGOH TOSHIAKI

IPC分类号： H01J37/32 ,  H05H1/46 ,  C23C16/50 ,  C23C16/511 ,  C23F4/00 ,  C30B25/10 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31

CPC分类号： H01J37/3222 ,  H01J37/32192 ,  H01J37/3244

摘要： A micro wave plasma processing device having a radial line slot antenna capable of suppressing an abnormal discharge to increase the exciting efficiency of micro wave plasma, wherein the tip part of a power supply line in a coaxial wave guide is separated from a slot plate forming a radiating surface at a connection part between the radial line slot antenna and the coaxial wave guide.

公开(公告)号：EP1377138A4

公开(公告)日：2005-04-06

申请号：EP02707231

申请日：2002-03-28

申请人： TOKYO ELECTRON LTD ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  HIRAYAMA MASAKI ,  SUGAWA SHIGETOSHI ,  GOTO TETSUYA

IPC分类号： H05H1/00 ,  B01J19/08 ,  C23C16/511 ,  C23C16/52 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H05H1/46

CPC分类号： H01J37/32266 ,  H01J37/32192 ,  H01J37/32954 ,  H01J37/3299

摘要： A micro wave plasma processing device, wherein micro wave is led into a process chamber through a wave guide (26) to generate plasma, the power of the reflected wave reflected by the plasma generated in the process chamber is monitored by a reflection monitor (40) and a power monitor (42), the frequency of the micro wave generated by a magnetron (24) is monitored by an incident monitor (36) and a frequency monitor (48), and a power fed to the magnetron (24) is controlled based on the monitored power and frequency of the reflected wave, whereby the density of the plasma can be controlled at a constant.

公开(公告)号：EP1376670A4

公开(公告)日：2005-04-06

申请号：EP02708713

申请日：2002-03-28

申请人： TOKYO ELECTRON LTD ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  HIRAYAMA MASAKI ,  SUGAWA S ,  GOTO TETSUYA

IPC分类号： H05H1/46 ,  B01J19/08 ,  C23C16/511 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31

CPC分类号： H01J37/3244 ,  H01J37/32192 ,  H01J37/32238

摘要： In a microwave plasma-processing device, a shower plate or plasma penetration window opposed to a board to be processed is recessed on the side opposed to the board to be processed, whereby a decrease in plasma density in the peripheral region of the board to be processed is compensated. As a result, even when plasma processing at low pressure, such as etching, is effected, stabilized uniform plasma is maintained in the vicinity of the surface of the board to be processed. Further, such arrangement enhances ignition of plasma.

摘要翻译： 在微波等离子体处理装置中，在与被处理基板相对的一侧凹入与被处理基板相对的喷淋板或等离子体渗透窗，从而使基板周边区域的等离子体密度降低 处理得到补偿。 其结果是，即使进行蚀刻等低压等离子体处理，也能够在被处理基板表面附近维持稳定的均匀的等离子体。 此外，这种布置增强了等离子体的点燃。

公开(公告)号：EP1681715A4

公开(公告)日：2009-12-30

申请号：EP04818177

申请日：2004-11-02

申请人： OHMI TADAHIRO ,  TOKYO ELECTRON LTD

发明人： OHMI TADAHIRO ,  NOZAWA TOSHIHISA ,  MORITA OSAMU ,  YUASA TAMAKI ,  KOTANI KOJI

IPC分类号： H01J37/32 ,  C23C16/455 ,  H01L21/3065 ,  H01L21/31

CPC分类号： H01J37/32192 ,  C23C16/4411 ,  C23C16/45572 ,  C23C16/511 ,  H01J37/3244 ,  H01J37/32724

公开(公告)号：EP1083591A4

公开(公告)日：2008-11-26

申请号：EP00906684

申请日：2000-03-03

申请人： TOKYO ELECTRON LTD ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  HIRAYAMA MASAKI

IPC分类号： H01L21/00 ,  H01L21/3065 ,  H01L21/311

CPC分类号： H01L21/67109 ,  H01J2237/2001 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67069

摘要： A device for plasma processing comprises a gas supply system for supplying a source gas necessary for creating a plasma, and an exhaust system for discharging the gas to reduce the pressure in a container, in which a plasma is generated to process an object. The container encloses a conducting stage for supporting an object to be processed, and the stage has a structure to which DC or high-frequency voltage is applied. The stage includes the cooling channel within it to cool the object to be processed. The material of the cooling channel has a high thermal conductivity to transfer heat from the stage to the cooling channel, and the material is highly insulative to isolate the coolant from the DC or high-frequency voltage is applied to the stage.

公开(公告)号：EP1617483A4

公开(公告)日：2008-03-05

申请号：EP04724878

申请日：2004-03-31

申请人： TOKYO ELECTRON LTD ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  TERAMOTO AKINOBU ,  WAKAMATSU HIDETOSHI ,  KOBAYASHI YASUO

IPC分类号： H01L29/78 ,  H01L21/04 ,  H01L21/28 ,  H01L21/318 ,  H01L21/336 ,  H01L29/51

CPC分类号： H01L21/318 ,  H01L21/28167 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/513 ,  H01L29/518

摘要： A semiconductor device exhibiting good characteristics by sustaining the dielectric constant of a High-K insulating film in a high state, and a process for fabricating a semiconductor device in which the dielectric constant of the High-K insulating film can be sustained in a high state. The semiconductor device comprises a silicon substrate, a gate electrode layer, and a gate insulating film interposed between the silicon substrate and the gate electrode layer. The gate insulating film is a high dielectric constant (high-k) film produced by nitriding a mixture of a metal and silicon. Since the High-K film itself is a nitride, generation of SiO2 can be prevented.