- 专利标题： PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE AND PRODUCTION METHOD FOR FIELD EFFECT TRANSISTOR
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申请号： EP02767854.9申请日： 2002-08-23
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公开(公告)号： EP1437765B1公开(公告)日： 2018-12-26
- 发明人: SHIONO, Ichiro , MIZUSHIMA,Kazuki , YAMAGUCHI, Kenji
- 申请人： SUMCO CORPORATION
- 申请人地址： 2-1, Shibaura 1-chome Minato-ku, Tokyo JP
- 专利权人： SUMCO CORPORATION
- 当前专利权人： SUMCO CORPORATION
- 当前专利权人地址： 2-1, Shibaura 1-chome Minato-ku, Tokyo JP
- 代理机构： Hoffmann Eitle
- 优先权： JP2001253175 20010823
- 国际公布： WO2003019632 20030306
- 主分类号： H01L21/205
- IPC分类号： H01L21/205 ; H01L21/336
摘要：
Production of a semiconductor substrate having an silicon-germanium (SiGe) layers (2,3) formed on an silicon substrate (1) comprises heat treating at temperatures exceeding epitaxial growth temperature while or after SiGe layers are formed by epitaxial growth and polishing out surface unevenness produced by the heat treatment after the SiGe layers are formed.
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