公开(公告)号：EP3731260A1

公开(公告)日：2020-10-28

申请号：EP18892096.1

申请日：2018-10-02

申请人： Sumco Corporation

发明人： MATSUMOTO Koji ,  ONO Toshiaki ,  AMANO Hiroshi ,  HONDA Yoshio

IPC分类号： H01L21/205 ,  C23C16/34 ,  C30B25/02 ,  C30B29/38

摘要： [Problem] To suppress diffusion of a group III material into an Si substrate during the time when a group III nitride semiconductor layer is grown on the Si substrate, with an AlN buffer layer being interposed therebetween.
[Solution] A method for manufacturing a group III nitride semiconductor substrate comprises: a step (S12A) for growing a first AlN buffer layer 21 on an Si substrate 10; a step (S12B) for growing a second AlN buffer layer 22 on the first AlN buffer layer 21 at a temperature higher than a growth temperature of the first AlN buffer layer 21; and a step (S13) for growing a group III nitride semiconductor layer 30 on the second AlN buffer layer 22. The growth temperature of the first AlN buffer layer 21 is 400-600°C.

公开(公告)号：EP1758168B1

公开(公告)日：2020-02-19

申请号：EP05743926.7

申请日：2005-05-25

申请人： SUMCO CORPORATION

发明人： MORITA, Etsurou, Sumco Corporation ,  SANO, Ritarou, Sumco Corporation ,  ENDO, Akihiko, Sumco Corporation

IPC分类号： H01L27/12 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/762

公开(公告)号：EP1667207B1

公开(公告)日：2019-07-17

申请号：EP04787750.1

申请日：2004-09-08

申请人： SUMCO Corporation

发明人： ENDO, Akihiko c/o Sumco Corporation ,  NISHIHATA, Hideki c/o Sumco Corporation

IPC分类号： H01L21/02 ,  H01L27/12

公开(公告)号：EP1447839B1

公开(公告)日：2019-05-22

申请号：EP02755785.9

申请日：2002-08-02

申请人： SUMCO CORPORATION

发明人： MIZUSHIMA, Kazuki, c/o Mitsubishi Silicon Corp. ,  Shiono, Ichiro, c/o Mitsubishi Silicon Corp. ,  Yamaguchi, Kenji, c/o Mitsubishi Silicon Corp.

IPC分类号： H01L21/20 ,  H01L29/78 ,  H01L21/336 ,  H01L29/786 ,  H01L29/161 ,  H01L21/205

公开(公告)号：EP2226155B1

公开(公告)日：2019-05-08

申请号：EP10154263.7

申请日：2010-02-22

申请人： SUMCO Corporation

发明人： Kaito, Ryoichi

IPC分类号： B24B5/04 ,  B24B5/50 ,  B24B41/06

公开(公告)号：EP1592056B1

公开(公告)日：2018-12-26

申请号：EP03756661.9

申请日：2003-10-16

申请人： SUMCO CORPORATION

发明人： OKUBO, Akira Sumitomo Mitsubishi Silicon Corp. ,  KONDO, Hideyuki Sumitomo Mitsubishi Silicon Corp.

IPC分类号： H01L21/66 ,  H01L21/265 ,  H01L27/12 ,  G01N23/225

CPC分类号： G01N23/225

摘要： An inspection method is provided for accurate measurement of conductive materials as defects within a silicon oxide film base material embedded in a SOI wafer sample. In the method, the internal state of a sample 2 is inspected by measuring an conductive material within an insulating base material 11 formed upon the sample 2. Ions or electrons are irradiated upon the surface of the inspection region of the base material 11. A surface image is imaged with secondary electrons emitted from the surface 11a and the vicinity of the surface. The inspection region is etched and a surface image is imaged successively with secondary electrons emitted from a surface 11b and from its vicinity, renewed successively at the etched depth. The conductive material within the base material 11 is measured based upon the accumulated surface images.

公开(公告)号：EP1437765B1

公开(公告)日：2018-12-26

申请号：EP02767854.9

申请日：2002-08-23

申请人： SUMCO CORPORATION

发明人： SHIONO, Ichiro ,  MIZUSHIMA,Kazuki ,  YAMAGUCHI, Kenji

IPC分类号： H01L21/205 ,  H01L21/336

CPC分类号： H01L29/165 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/1054 ,  H01L29/66916

摘要： Production of a semiconductor substrate having an silicon-germanium (SiGe) layers (2,3) formed on an silicon substrate (1) comprises heat treating at temperatures exceeding epitaxial growth temperature while or after SiGe layers are formed by epitaxial growth and polishing out surface unevenness produced by the heat treatment after the SiGe layers are formed.

公开(公告)号：EP1732114B1

公开(公告)日：2018-12-05

申请号：EP06011724.9

申请日：2006-06-07

申请人： SUMCO Corporation

发明人： Umeno, Shigeru ,  Oura, Yasuhiro ,  Kato, Koji

IPC分类号： H01L21/322 ,  H01L21/265 ,  H01L29/32

CPC分类号： H01L29/32 ,  H01L21/3221 ,  H01L21/3225 ,  Y10T428/31663

摘要： A silicon wafer for an IGBT is produced by forming an ingot having an interstitial oxygen concentration [Oi] of not more than 7.0 × 10 17 atoms/cm 3 by the Czochralski method; doping phosphorus in the ingot by neutron beam irradiation to the ingot; slicing a wafer from the ingot; performing annealing of the wafer in an oxidizing atmosphere containing at least oxygen at a temperature satisfying a predetermined formula; and forming a polysilicon layer or a strained layer on one side of the wafer.

公开(公告)号：EP2117038B1

公开(公告)日：2018-02-28

申请号：EP09159574.4

申请日：2009-05-06

申请人： SUMCO CORPORATION

发明人： Shiota, Takaaki, Sumco Corporation ,  Nakayama, Takashi, Sumco Corporation ,  Kabasawa, Tomoyuki,, Sumco Corporation

IPC分类号： H01L21/02 ,  H01L21/322

CPC分类号： H01L21/3225 ,  H01L21/02024

摘要： In a silicon wafer having an oxygen precipitate layer, a depth of DZ layer ranging from a wafer surface to an oxygen precipitate layer is 2 to 10 µm and an oxygen precipitate concentration of the oxygen precipitate layer is not less than 5x10 7 precipitates/cm 3 .

公开(公告)号：EP1992942B1

公开(公告)日：2017-12-13

申请号：EP07738100.2

申请日：2007-03-02

申请人： Niigata University ,  SUMCO Corporation

发明人： GOTO, Terutaka ,  NEMOTO, Yuichi ,  KANETA, Hiroshi c/o NIIGATA UNIVERSITY ,  HOURAI, Masataka

IPC分类号： G01N29/07 ,  G01N29/04 ,  G01N29/24 ,  G01N29/34

CPC分类号： G01N29/07 ,  G01N29/041 ,  G01N29/2437 ,  G01N29/343 ,  G01N2291/02881 ,  G01N2291/2698

摘要： There is provided a quantitative evaluation device or the like of atomic vacancy existing in a silicon wafer in which the atomic vacancy concentration in the silicon wafer can be quantitatively evaluated by forming a rationalized thin-film transducer on a surface of a silicon sample without conducting an acceleration treatment for enhancing the concentration. This is characterized by comprising a magnetic force generating means 2 for applying an external magnetic field to a silicon sample 5 cut out from a given site of a silicon wafer, a temperature controlling means 3 capable of cooling the silicon sample 5 to a temperature region of not higher than 50 K, a ultrasonic oscillating-detecting means 4 for oscillating ultrasonic pulse to the surface of the silicon sample 5 and propagating the oscillated ultrasonic pulse into the silicon sample 5 and detecting a change of sound velocity in the propagated ultrasonic pulse, wherein a thin-film transducer 8 having properties capable of following to an expansion of the silicon sample 5 at the above temperature region and substantially aligning C-axis in a given direction is directly formed on the surface of the silicon sample 5.