发明公开
EP1439583A1 Sublithographic contact structure, in particular for a phase change memory cell, and fabrication process thereof
有权
次光刻接触结构，特别是用于相变存储器元件，和它们的制备方法
- 专利标题： Sublithographic contact structure, in particular for a phase change memory cell, and fabrication process thereof
- 专利标题（中）： 次光刻接触结构，特别是用于相变存储器元件，和它们的制备方法
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申请号： EP03425016.7申请日： 2003-01-15
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公开(公告)号： EP1439583A1公开(公告)日： 2004-07-21
- 发明人: Khouri, Osama, , Pollaccia, Giorgio , Pellizzer, Fabio
- 申请人： STMicroelectronics S.r.l. , OVONYX Inc.
- 申请人地址： Via C. Olivetti, 2 20041 Agrate Brianza (Milano) IT
- 专利权人： STMicroelectronics S.r.l.,OVONYX Inc.
- 当前专利权人： STMicroelectronics S.r.l.,OVONYX Inc.
- 当前专利权人地址： Via C. Olivetti, 2 20041 Agrate Brianza (Milano) IT
- 代理机构： Cerbaro, Elena, Dr.
- 主分类号： H01L27/24
- IPC分类号： H01L27/24 ; H01L45/00
摘要：
A contact structure (98) for a PCM device is formed by an elongated formation (102) having a longitudinal extension parallel to the upper surface (92) of the body (91) and an end face (110) extending in a vertical plane. The end face (110) is in contact with a bottom portion of an active region (103) of chalcogenic material so that the dimensions of the contact area defined by the end face (110) are determined by the thickness (S) of the elongated formation and by the width (W) thereof.
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